STT253
Thyristor-Thyristor Modules
Dimensions in mm (1mm=0.0394")
Type
V
RSM
V
DSM
V
900
1300
1500
1700
1900
V
RRM
V
DRM
V
800
1200
1400
1600
1800
STT253GK08
STT253GK12
STT253GK14
STT253GK16
STT253GK18
Symbol
I
TRMS
, I
FRMS
T
VJ
=T
VJM
I
TAVM
, I
FAVM
T
C
=85
o
C; 180
o
sine
T
VJ
=45
o
C
V
R
=0
T
VJ
=T
VJM
V
R
=0
T
VJ
=45
o
C
V
R
=0
T
VJ
=T
VJM
V
R
=0
T
VJ
=T
VJM
f=50Hz, t
p
=200us
V
D
=2/3V
DRM
I
G
=1A
di
G
/dt=1A/us
Test Conditions
Maximum Ratings
400
253
Unit
A
I
TSM
, I
FSM
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
repetitive, I
T
=750A
8500
9000
7000
8000
405000
336000
320000
240000
250
A
i
2
dt
A
2
s
(di/dt)
cr
A/us
non repetitive, I
T
=250A
800
1000
120
60
20
10
-40...+140
140
-40...+130
V/us
W
W
V
o
(dv/dt)
cr
P
GM
P
GAV
V
RGM
T
VJ
T
VJM
T
stg
V
ISOL
M
d
Weight
T
VJ
=T
VJM
;
V
DR
=2/3V
DRM
R
GK
= ; method 1 (linear voltage rise)
T
VJ
=T
VJM
I
T
=I
TAVM
t
p
=30us
t
p
=500us
C
50/60Hz, RMS
_
I
ISOL
<1mA
t=1min
t=1s
3000
3600
2.5-5/22-44
12-15/106-132
430
V~
Nm/lb.in.
g
Mounting torque (M5)
Terminal connection torque (M8)
Typical including screws
STT253
Thyristor-Thyristor Modules
Symbol
I
RRM
I
DRM
V
T
, V
F
V
TO
r
T
V
GT
I
GT
V
GD
I
GD
I
L
I
H
t
gd
t
q
Q
S
I
RM
R
thJC
R
thJK
d
S
d
A
a
per thyristor/diode; DC current
per module
per thyristor/diode; DC current
per module
Creeping distance on surface
Strike distance through air
Maximum allowable acceleration
T
VJ
=25
o
C; t
p
=30us; V
D
=6V
I
G
=0.45A; di
G
/dt=0.45A/us
T
VJ
=25
o
C; V
D
=6V; R
GK
=
T
VJ
=25
o
C; V
D
=1/2V
DRM
I
G
=1A; di
G
/dt=1A/us
T
VJ
=T
VJM
; I
T
=300A; t
p
=200us; -di/dt=10A/us
V
R
=100V; dv/dt=50V/us; V
D
=2/3V
DRM
T
VJ
=125
o
C; I
T
, I
F
=400A; -di/dt=50A/us
typ.
V
D
=6V;
V
D
=6V;
T
VJ
=T
VJM
;
T
VJ
=25
o
C
T
VJ
=-40
o
C
T
VJ
=25
o
C
T
VJ
=-40
o
C
V
D
=2/3V
DRM
I
T
, I
F
=750A; T
VJ
=25
o
C
For power-loss calculations only (T
VJ
=140
o
C)
Test Conditions
T
VJ
=T
VJM
; V
R
=V
RRM
; V
D
=V
DRM
Characteristic Values
70
40
1.7
0.85
1.1
2
3
150
200
0.25
10
300
150
2
200
760
275
0.129
0.0645
0.169
0.0845
12.7
9.6
50
Unit
mA
mA
V
V
m
V
mA
V
mA
mA
mA
us
us
uC
A
K/W
K/W
mm
mm
m/s
2
FEATURES
* International standard package
* Direct copper bonded Al
2
O
3
-ceramic
base plate
* Planar passivated chips
* Isolation voltage 3600 V~
APPLICATIONS
* Motor control
* Power converter
* Heat and temperature control for
industrial furnaces and chemical
processes
* Lighting control
* Contactless switches
ADVANTAGES
* Space and weight savings
* Simple mounting
* Improved temperature and power
cycling
* Reduced protection circuits
STT253
Thyristor-Thyristor Modules
Fig. 1 Surge overload current
I
TSM
, I
FSM
: Crest value, t: duration
Fig. 2 i
2
t versus time (1-10 ms)
Fig. 2a Maximum forward current
at case temperature
Fig. 3 Power dissipation versus on-state current and ambient temperature
(per thyristor or diode)
Fig. 4 Gate trigger characteristics
3 x STT253
Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current
and ambient temperature
Fig. 6 Gate trigger delay time
STT253
Thyristor-Thyristor Modules
Fig. 7 Three phase AC-controller:
Power dissipation versus RMS
output current and ambient
temperature
3 x STT253
0.15
K/W
30°
DC
Fig. 8 Transient thermal impedance
junction to case (per thyristor or
diode)
R
thJC
for various conduction angles d:
Z
thJC
0.10
d
DC
180
o
C
120
o
C
60
o
C
30
o
C
R
thJC
(K/W)
0.129
0.131
0.131
0.132
0.132
0.05
Constants for Z
thJC
calculation:
i
0.00
10
-3
10
-2
10
-1
10
0
10
1
s
10
2
R
thi
(K/W)
0.0035
0.0165
0.1091
t
i
(s)
0.099
0.168
0.456
t
1
2
3
0.20
K/W
30°
DC
0.15
Z
thJK
Fig. 9 Transient thermal impedance
junction to heatsink (per thyristor
or diode)
R
thJK
for various conduction angles d:
d
R
thJK
(K/W)
0.169
0.171
0.172
0.172
0.173
DC
180
o
C
120
o
C
60
o
C
30
o
C
0.10
0.05
Constants for Z
thJK
calculation:
i
0.00
10
-3
10
-2
10
-1
10
0
10
1
s
10
2
R
thi
(K/W)
0.0033
0.0159
0.1053
0.04
t
i
(s)
0.099
0.168
0.456
1.36
t
1
2
3
4
京公网安备 11010802033920号
EEWORLD
