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ADS6616A4A-7.5

Description
synchronous dram(1M X 16 bit X 4 banks)
File Size609KB,8 Pages
ManufacturerADATA
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ADS6616A4A-7.5 Overview

synchronous dram(1M X 16 bit X 4 banks)

A-Data
Synchronous DRAM
General Description
The ADS6616A4A are four-bank Synchronous
DRAMs organized as 1,048,576 words x 16 bits x 4
banks,
Synchronous design allows precise cycle control
with the use of system clock I/O transactions are
possible on every clock cycle.
Range of operating frequencies, programmable
burst length and programmable latencies allow the
same device to be useful for a variety of high
bandwidth high performance memory system
applications
ADS6616A4A
1M x 16 Bit x 4 Banks
Features
•JEDEC
standard LVTTL 3.3V power supply
•MRS
Cycle with address key programs
-CAS Latency (2 & 3)
-Burst Length (1,2,3,8,& full page)
-Burst Type (sequential & Interleave)
•4
banks operation
•All
inputs are sampled at the positive edge of
the system clock
•Burst
Read single write operation
•Auto
& Self refresh
•4096
refresh cycle
•DQM
for masking
•Package:54-pins
400 mil TSOP-Type II
Ordering Information.
Part No.
ADS6616A4A-5
ADS6616A4A-6
ADS6616A4A-7
ADS6616A4A-7.5
Frequency
200Mhz
166Mhz
143Mhz
133Mhz
Interface
LVTTL
LVTTL
LVTTL
LVTTL
Package
400mil 54pin TSOPII
400mil 54pin TSOPII
400mil 54pin TSOPII
400mil 54pin TSOPII
Pin Assignment
V
DD
DQ0
V
DDQ
DQ1
DQ2
V
SS
DQ3
DQ4
V
DDQ
DQ5
DQ6
V
SSQ
DQ7
V
DD
LDQM
/WE
/CAS
/RAS
/CS
BA0
BA1
A10/AP
A0
A1
A2
A3
V
DD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
54
53
52
51
50
49
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
Vss
DQ15
Vss
Q
DQ14
DQ13
V
DDQ
DQ12
DQ11
V
SSQ
DQ10
DQ9
V
DDQ
DQ8
V
SS
NC
UDQM
CLK
CKE
NC
A11
A9
A8
A7
A6
A5
A4
V
SS
54-pin plastic TSOP II 400 mil
Rev 1.1 April, 2001
1

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