APT12060B2VR
APT12060LVR
POWER MOS V
®
B2VR
1200V 20A 0.600
W
Power MOS V
®
is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V
®
also achieves faster switching speeds through optimized gate layout.
T-MAX™
TO-264
LVR
• Identical Specifications:
T-MAX™
or TO-264 Package
• Faster Switching
• Lower Leakage
MAXIMUM RATINGS
Symbol
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
,T
STG
T
L
I
AR
E
AR
E
AS
Parameter
D
G
S
• 100% Avalanche Tested
All Ratings: T
C
= 25°C unless otherwise specified.
APT12060
UNIT
Volts
Amps
Drain-Source Voltage
Continuous Drain Current @ T
C
= 25°C
Pulsed Drain Current
1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
C
= 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current
1
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
L
A
IC
N
H
C N
TE IO
D AT
E
C
M
N
R
A
V
FO
D IN
A
1200
20
80
±30
±40
625
5.0
-55 to 150
300
20
50
(Repetitive and Non-Repetitive)
1
4
Volts
Watts
W/°C
°C
Amps
mJ
3000
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
I
D(on)
R
DS(on)
I
DSS
I
GSS
V
GS(th)
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
GS
= 0V, I
D
= 250µA)
On State Drain Current
2
MIN
TYP
MAX
UNIT
Volts
Amps
1200
20
0.600
25
250
2
4
±100
(V
DS
> I
D(on)
x R
DS(on)
Max, V
GS
= 10V)
2
Drain-Source On-State Resistance
(V
GS
= 10V, 0.5 I
D[Cont.]
)
Ohms
µA
8-2000
050-5949
rev B
Zero Gate Voltage Drain Current (V
DS
= V
DSS
, V
GS
= 0V)
Zero Gate Voltage Drain Current (V
DS
= 0.8 V
DSS
, V
GS
= 0V, T
C
= 125°C)
Gate-Source Leakage Current (V
GS
= ±30V, V
DS
= 0V)
Gate Threshold Voltage (V
DS
= V
GS
, I
D
= 2.5mA)
nA
Volts
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
EUROPE
405 S.W. Columbia Street
Chemin de Magret
Bend, Oregon 97702 -1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61
DYNAMIC CHARACTERISTICS
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
APT12060 B2VR - LVR
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1 MHz
V
GS
= 10V
MIN
TYP
MAX
UNIT
7580
610
290
370
33
18
13
66
14
170
pF
Gate-Source Charge
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
Characteristic / Test Conditions
Continuous Source Current
Pulsed Source Current
1
L
A
IC
N
H
EC ON
T I
D AT
E
C
M
N
R
A
O
V
D INF
A
V
DD
= 0.5 V
DSS
I
D
= 0.5 I
D[Cont.]
@ 25°C
V
GS
= 15V
V
DD
= 0.5 V
DSS
R
G
= 0.6W
I
D
= I
D[Cont.]
@ 25°C
MIN
TYP
(Body Diode)
(Body Diode)
2
nC
ns
MAX
UNIT
Amps
Volts
ns
µC
20
80
1.3
Diode Forward Voltage
(V
GS
= 0V, I
S
= -I
D[Cont.]
)
Reverse Recovery Time (I
S
= -I
D[Cont.]
, dl
S
/dt = 100A/µs)
Reverse Recovery Charge (I
S
= -I
D[Cont.]
, dl
S
/dt = 100A/µs)
1190
25.5
THERMAL CHARACTERISTICS
Symbol
R
qJC
R
qJA
Characteristic
Junction to Case
Junction to Ambient
3
See MIL-STD-750 Method 3471
4
Starting T = +25°C, L = 15mH, R
j
MIN
TYP
MAX
UNIT
°C/W
0.20
40
G
1
Repetitive Rating: Pulse width limited by maximum junction
temperature.
= 25W, Peak I
L
= 20A
2
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
T-MAX
TM
(B2) Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
TO-264 (L) Package Outline
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
5.79 (.228)
6.20 (.244)
Drain
20.80 (.819)
21.46 (.845)
Drain
25.48 (1.003)
26.49 (1.043)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
2.29 (.090)
2.69 (.106)
19.81 (.780)
21.39 (.842)
2.29 (.090)
2.69 (.106)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
8-2000
Gate
Drain
Source
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
Gate
Drain
Source
rev B
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
050-5949
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents: 4,895,810
5,256,583
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058
PCB Design
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