WSH41F
Hall Effect Sensor IC with Complementary Output
Drivers
Features:
Operate from 2.8V to 18V supply voltage.
On-chip Hall sensor.
Internal bandgap regulator allows temperature compensated operations and a
wide operating voltage range.
High output sinking capability up to 400mA for driving large load.
Lower current change rate reduces the peak output voltages during switching.
Available in rugged low profile SOT-25 , SIP-4L packages.
Built-in
FG
output.
Built-in protection diode for reverse power supply fault.
General Description:
WSH41F is designed to integrate Hall sensor with complementary output drivers
and frequency generator together on the same chip, it is suitable for speed
measurement, revolution counting, positioning. It includes a temperature compensated
voltage regulator, a differential amplifier, a Hysteresis controller, two open-collector
output drivers capable of sinking 400mA current load and an open-collector frequency
generator capable of sinking 10mA current load. An on-chip protection diode is
implemented to prevent reverse power fault.
The temperature-dependent bias increases the supply voltage of the hall plates
and adjusts the switching points to the decreasing induction of magnets at higher
temperatures. Subsequently, the open collector output switches to the appropriate state.
WSH41F are rated for operation over temperature range from –20˚ C to 125˚C and
voltage ranges from 2.8V to 18V.
In
SOT-25
package, the built-in FG function can save fan system a lot of cost. It is a
very economical solution when fan system need FG signal.
Winson reserves the right to make changes to improve reliability or manufacturability.
©Winson Semiconductor Corp.2003/11/20
1
WSH41F
Pin Descriptions: SOT-25
Name
P/I/O
Pin#
OUT1
O
1
Vss
P
2
OUT2
O
3
FG
O
4
VDD
P
5
Pin Descriptions: SIP-4L
Name
P/I/O
Pin#
Vcc
P
1
OUT1
O
2
OUT2
O
3
Vss
P
4
Description
Output Pin 1
Ground
Output Pin 2
Frequency Generator
Positive Power Supply
Description
Positive Power Supply
Output Pin #1
Output Pin #2
Ground
Absolute Maximum Rating (at Ta=25˚ C)
Supply Voltage
Vcc -------------------------- 18V
Output / FG breakdown Voltage Vout/Vfg --------------------- 26V
Magnetic flux density
B -------------------------- Unlimited
Reverse Protection Voltage
Vr -------------------------- 20V
Output Current continuous
Ic -------------------------- 300mA
Hold current
Ih
------------------------
400mA
Peak current
Ip
-------------------------
800mA
FG ON Current (continuous)
If
-------------------------- 20mA
Operating Temperature Range
Storage Temperature Range
Package Power Dissipation
Ta --------------------------
Ts --------------------------
Pd --------------------------
(-20˚C to +125˚C)
(-65˚C to +150˚C)
350mw for SOT-25
500mw for SIP-4L
Winson reserves the right to make changes to improve reliability or manufacturability.
©Winson Semiconductor Corp.2003/11/20
2
WSH41F
Electrical Characteristics:
(T=+25˚C, Vcc=2.8V to 18V)
Characteristic
Symbol Test Conditions
Min
Typ Max Units
Supply Voltage
Vcc
V
―
2.8
―
18
Output Saturation Vout(sat) Vcc=18V, Ic=200mA
―
V
0.2
0.4
Voltage
B > Bop
FG Saturation
Vfg(sat) Vcc=18V, If=10mA
V
―
0.15
0.4
Voltage
B > Bop
Output Leakage
Ileakage Vcc=18V, B < Brp
uA
―
<0.1
10
Current
Supply Current
Isupply Vcc=18V, Output &
mA
―
13
25
FG Open
Output / FG Rising
Tr
3.0
us
Vcc=12V, RL=820Ω
―
10
Time
CL=20Pf
Output / FG Falling
Tf
us
Vcc=12V, RL=820Ω
―
0.3
1.5
Time
CL=20Pf
Output / FG Time
us
△t
Vcc=12V, RL=820Ω
―
0.3
3
Differential
CL=20Pf
Function Block:
Winson reserves the right to make changes to improve reliability or manufacturability.
©Winson Semiconductor Corp.2003/11/20
3
WSH41F
Magnetic Characteristics:
Characteristics
Operate Point
Release Point
Symbol
Bop
Brp
Quantity
None latch
None latch
10
Ta= -20˚C to +90˚C
Min
Typ.
Max
150
Unit
Gauss
Gauss
Ordering Information:
SIP- 4L: WSH41F-XPA5
SOT-25: WSH41F-XPB5
Elec. Grade
None latch : 150 Gauss
Winson reserves the right to make changes to improve reliability or manufacturability.
©Winson Semiconductor Corp.2003/11/20
4
WSH41F
Test Circuit:
SIP-4L
SOT-25
Winson reserves the right to make changes to improve reliability or manufacturability.
©Winson Semiconductor Corp.2003/11/20
5
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