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BFR91

Description
RF & microwave discrete low power transistors
File Size117KB,5 Pages
ManufacturerAdvanced Power
Websitehttp://advancedpower.ch/
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BFR91 Overview

RF & microwave discrete low power transistors

140 COMMERCE DRIVE
MONTGOMERYVILLE, PA
18936-1013
PHONE: (215) 631-9840
FAX: (215) 631-9855
BFR91
RF & MICROWAVE DISCRETE
LOW POWER TRANSISTORS
BFR91G
* G Denotes RoHS Compliant, Pb Free Terminal Finish
Features
High Current-Gain – Bandwidth Product, fT = 5 GHz (typ) @ IC = 30 mA
Low Noise Figure – NF = 1.9 dB (typ) @ f = 0.5 GHz, 2.5 dB (typ) @ 1GHz
High Power Gain – Gmax = 16 dB (typ) @ f = 0.5 GHz, 10.9dB (typ) @ 1GHz
Macro T
(STYLE #2)
DESCRIPTION:
Designed primarily for use in high-gain, low noise, small-signal amplifiers. Also used in
applications requiring fast switching times.
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25
°
C)
Symbol
V
CEO
V
CBO
V
EBO
I
C
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Value
12
15
3.0
35
Unit
Vdc
Vdc
Vdc
mA
Thermal Data
P
D
Total Device Dissipation @ TA = 60ºC
Derate above 60ºC
Storage Temperature
-65 to +150
ºC
ºC/W
Total Device Dissipation @ TA = 60ºC
Derate above 60ºC
180
2.0
mWatts
mW/
ºC
Tstg
R
θ
JA
500
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein
Visit our website at
WWW.ADVANCEDPOWER.COM
or contact our factory direct.
Rev A 9/2005

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