e
PTB 20206
1.0 Watt, 470–860 MHz
RF Power Transistor
Description
The 20206 is an NPN common emitter RF power transistor intended
for 20 Vdc class A operation from 470 to 860 MHz. Rated at 1.0 watt
minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization ensure excellent device reliability. 100% lot traceability
is standard.
Class A Characteristics
1.0 Watt, 470–860 MHz
-44 dBc Max Two-tone IMD at 1 W(PEP)
Gold Metallization
Silicon Nitride Passivated
Typical Output Power vs. Input Power
3.0
Output Power (Watts)
2.5
2.0
1.5
1.0
0.5
0.0
0.0
0.1
0.2
0.3
2020
6
LOT
COD
E
V
CE
= 20 V
I
CQ
= 360 mA
f = 860 MHz
Input Power (Watts)
Package 20206
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
T
STG
R
θJC
Symbol
V
CER
V
CBO
V
EBO
I
C
P
D
Value
40
50
4.0
1.7
13.5
0.077
–40 to +150
13.0
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
1
9/28/98
PTB 20206
Electrical Characteristics
Characteristic
Breakdown Voltage C to E
Breakdown Voltage C to E
Breakdown Voltage C to E
Breakdown Voltage E to B
DC Current Gain
Output Capacitance
(100% Tested)
e
Conditions
I
C
= 5 mA, I
B
= 0 A
V
BE
= 0 V, I
C
= 5 mA
I
B
= 0 A, I
C
= 5 mA, R
BE
= 22
Ω
I
C
= 0 A, I
E
= 5 mA
V
CE
= 5 V, I
C
= 250 mA
V
cb
= 20 V, I
E
= 0 A, f = 1 MHz
Symbol
V
(BR)CEO
V
(BR)CES
V
(BR)CER
V
(BR)EBO
h
FE
Cobo
Min
25
55
40
3.5
20
—
Typ
30
70
—
5
50
4.5
Max
—
—
—
—
120
—
Units
Volts
Volts
Volts
Volts
—
pF
RF Specifications
(100% Tested)
Characteristic
Gain
(V
CE
= 20 Vdc, Pout = 1 W, I
CQ
= 360 mA, f = 860 MHz)
Two-tone Intermodulation Distortion
(V
CE
= 20 Vdc, Pout = 1 W(PEP), I
CQ
= 360 mA,
f
1
= 860 MHz, f
2
= 860.1 MHz),
Load Mismatch Tolerance
(V
CE
= 20 Vdc, Pout = 2 W, I
CQ
= 360 mA,
f = 860 MHz—all phase angles at frequency of test)
Symbol
G
pe
IM
2
Min
11
—
Typ
11.5
-46
Max
—
-44
Units
dB
dBc
Ψ
—
—
30:1
—
Impedance Data
(data shown for fixed-tuned broadband circuit)
Z
0
= 50
Ω
(V
CE
= 20 Vdc, Pout = 1 W, I
CQ
= 360 mA)
Z Source
Z Load
Frequency
MHz
470
704
782
860
R
7.2
6.9
5.8
5.8
Z Source
jX
-6.4
-4.1
-4.1
-3.6
R
13.7
12.8
14.4
17.2
Z Load
jX
-6.9
2.3
5.0
7.0
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
Specifications subject to change without notice.
LF
© 1996 Ericsson Inc.
EUS/KR 1301-PTB Uen Rev. B 09-28-98
2
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