APM2318A
N-Channel Enhancement Mode MOSFET
Features
•
30V/3A ,
R
DS(ON)
=35mΩ(typ.) @ V
GS
=10V
R
DS(ON)
=40mΩ(typ.) @ V
GS
=4.5V
R
DS(ON)
=60mΩ(typ.) @ V
GS
=2.5V
Pin Description
D
G
S
•
•
•
Super High Dense Cell Design
Reliable and Rugged
Lead Free Available (RoHS Compliant)
Top View of SOT-23
D
Applications
•
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems.
S
G
N-Channel MOSFET
Ordering and Marking Information
APM2318
Lead Free Code
Handling Code
Tem p. Range
Package Code
Package Code
A : SOT-23
Operating Junction Tem p. Range
C : -55 to 150°C
Handling Code
TU : Tube
TR : Tape & Reel
Lead Free Code
L : Lead Free Device Blank : Original Device
XXXXX - Date Code
APM2318 A :
M18X
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termina-
tion finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations.
ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classifica-
tion at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright
ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
1
www.anpec.com.tw
APM2318A
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
*
I
DM
*
I
S
*
T
J
T
STG
P
D
*
R
θJA
*
Note:
*Surface Mounted on 1in
pad area, t
≤
10sec.
2
(T
A
= 25°C unless otherwise noted)
Rating
30
±12
V
GS
=10V
3
12
1
150
-55 to 150
T
A
=25°C
T
A
=100°C
0.83
0.3
150
W
°C/W
A
°C
V
A
Unit
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
300µs Pulsed Drain Current
Diode Continuous Forward Current
Maximum Junction Temperature
Storage Temperature Range
Maximum Power Dissipation
Thermal Resistance-Junction to Ambient
Electrical Characteristics
Symbol
Parameter
(T
A
= 25°C unless otherwise noted)
APM2318A
Min.
Typ.
Max.
Test Condition
Unit
Static Characteristics
BV
DSS
Drain-Source Breakdown Voltage V
GS
=0V, I
DS
=250µA
I
DSS
V
GS(th)
I
GSS
R
DS(ON)
V
SD
a
a
30
1
30
0.5
0.7
35
40
60
0.7
1
±100
50
55
80
1.3
V
µA
V
nA
mΩ
V
Zero Gate Voltage Drain Current
Gate Threshold Voltage
Gate Leakage Current
V
DS
=24V, V
GS
=0V
T
J
=85°C
V
DS
=V
GS
, I
DS
=250µA
V
GS
=±12V, V
DS
=0V
V
GS
=10V, I
DS
=3A
Drain-Source On-state Resistance V
GS
=4.5V, I
DS
=2A
V
GS
=2.5V, I
DS
=1.5A
Diode Forward Voltage
b
I
SD
=0.5A, V
GS
=0V
Gate Charge Characteristics
Q
g
Total Gate Charge
Q
gs
Q
gd
Gate-Drain Charge
12
V
DS
=15V, V
GS
=10V,
I
DS
=3A
0.8
0.8
16
nC
Gate-Source Charge
Copyright
ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
2
www.anpec.com.tw
APM2318A
Electrical Characteristics (Cont.)
Symbol
Parameter
b
(T
A
= 25°C unless otherwise noted)
APM2318A
Min.
Typ.
Max.
Test Condition
Unit
Dynamic Characteristics
R
G
Gate Resistance
C
iss
C
oss
C
rss
t
d(ON)
T
r
t
d(OFF)
T
f
Notes:
V
GS
=0V,V
DS
=0V,F=1MHz
V
GS
=0V,
V
DS
=25V,
Frequency=1.0MHz
1.5
320
25
15
11
22
32
68
38
17
37
20
Ω
pF
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
V
DD
=15V, R
L
=15Ω,
I
DS
=1A, V
GEN
=10V,
R
G
=6Ω
ns
a : Pulse test ; pulse width≤300
µ
s, duty cycle≤2%.
b : Guaranteed by design, not subject to production testing.
Copyright
ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
3
www.anpec.com.tw
APM2318A
Typical Characteristics
Power Dissipation
1.0
0.9
3.0
0.8
0.7
2.5
2.0
1.5
1.0
0.5
0.1
0.0
T
A
=25 C
0
20
40
60
80 100 120 140 160
o
Drain Current
3.5
0.6
0.5
0.4
0.3
0.2
I
D
- Drain Current (A)
P
tot
- Power (W)
0.0
T
A
=25 C,V
G
=10V
0
20
40
60
80 100 120 140 160
o
T
j
- Junction Temperature (°C)
T
j
- Junction Temperature (°C)
Safe Operation Area
Normalized Transient Thermal Resistance
50
2
1
Thermal Transient Impedance
10
I
D
- Drain Current (A)
on
)L
im
Duty = 0.5
it
300
µ
s
1ms
s(
1
10ms
Rd
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
Mounted on 1in pad
o
R
θ
JA
: 150 C/W
2
100ms
0.1
1s
DC
T
A
=25 C
0.01
0.01
0.1
o
1
10
100
0.01
1E-4 1E-3 0.01
0.1
10
100
V
DS
- Drain - Source Voltage (V)
Square Wave Pulse Duration (sec)
Copyright
ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
4
www.anpec.com.tw
APM2318A
Typical Characteristics (Cont.)
Output Characteristics
12
V
GS
= 3,4,5,6,7,8,9,10V
2V
100
90
Drain-Source On Resistance
R
DS(ON)
- On - Resistance (mΩ)
10
80
70
60
50
40
30
20
10
V
GS
=4.5V
V
GS
=10V
V
GS
=2.5V
I
D
- Drain Current (A)
8
6
4
1.5V
2
0
0
0
1
2
3
4
5
0
2
4
6
8
10
12
V
DS
- Drain-Source Voltage (V)
I
D
- Drain Current (A)
Transfer Characteristics
12
1.8
1.6
Gate Threshold Voltage
I
DS
=250
µ
A
Normalized Threshold Voltage
3.0
10
1.4
1.2
1.0
0.8
0.6
0.4
0.2
I
D
- Drain Current (A)
8
6
T
j
=125 C
o
o
4
2
T
j
=25 C
T
j
=-55 C
o
0
0.0
0.5
1.0
1.5
2.0
2.5
0.0
-50 -25
0
25
50
75
100 125 150
V
GS
- Gate - Source Voltage (V)
T
j
- Junction Temperature (°C)
Copyright
ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
5
www.anpec.com.tw
DSP and ARM Processors
京公网安备 11010802033920号
EEWORLD
