CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
SWITCHING DIODE
VOLTAGE 100 Volts CURRENT 0.15 Ampere
APPLICATION
* Ultra high speed switching
BAS16PT
FEATURE
.041 (1.05)
.033 (0.85)
SOT-23
.110 (2.80)
.082 (2.10)
.066 (1.70)
.119 (3.04)
* Maximum total power disspation is 350mW.
* Peak forward current is 450mA.
(1)
(3)
CONSTRUCTION
* Silicon epitaxial planar
(2)
MARKING
* A6
.055 (1.40)
.047 (1.20)
.103 (2.64)
.086 (2.20)
.028 (0.70)
.020 (0.50)
.007 (0.177)
.018 (0.30)
.002 (0.05)
CIRCUIT
(2)
(1)
.045 (1.15)
.033 (0.85)
.019 (0.50)
* Small surface mounting type. (SOT-23)
* High speed. (T
RR=
1.5nSec Typ.)
* Suitable for high packing density.
(3)
Dimensions in inches and (millimeters)
SOT-23
MAXIMUM RATINGES
( At T
A
= 25
o
C unless otherwise noted )
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current at 1uSec.
Typical Junction Capacitance between Terminal (Note 1)
Maximum Reverse Recovery Time (Note 2)
Maximum Operating Temperature Range
Storage Temperature Range
o
SYMBOL
V
RRM
V
RMS
V
DC
I
O
I
FSM
C
J
T
RR
T
J
T
STG
BAS16PT
100
70
75
0.15
4.0
1.5
4.0
+150
-55 to +150
UNITS
Volts
Volts
Volts
Amps
Amps
pF
nSec
o
C
C
o
ELECTRICAL CHARACTERISTICS
( At T
A
= 25 C unless otherwise noted )
CHARACTERISTICS
Maximum Instantaneous Forward Voltage at I
F=
150mA
Maximum Average Reverse Current at V
R=
75V
SYMBOL
V
F
I
R
BAS16PT
1.25
1.0
UNITS
Volts
uAmps
2002-5
NOTES : 1. Measured at 1.0 MH
Z
and applied reverse voltage of 0 volts.
2. Measured at applied froward current of 10mA and reverse voltage of 10.0 volts.
3. ESD sensitive product handling required.
RATING CHARACTERISTIC CURVES ( BAS16PT )
FIG. 1 - TYPICAL FORWARD CURRENT
DERAING CURVE
50
FORWARD CURRENT, (mA)
20
10
5
2
1
0.5
0.2
0.1
0
25
50
75
100
o
FIG. 2 - FORWARD CHARACTERISTICS
AVERAGE FORWARD CURRENT, (%)
125
100
75
50
25
0
Ta=85
o
C
50
o
C
25
o
C
0
o
C
o
-
30 C
125
150
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
AMBIENT TEMPERATURE, (
C
)
FORWARD VOLTAGE, (V)
FIG. 3 - TYPICAL JUNCTION CAPACITANCE
FIG. 4 - REVERSE CHARACTERISTICS
Ta=100
o
C
JUNCTION CAPACITANCE, (pF)
f=1MHz
REVERSE CURRENT, (nA)
4
100
10
1
-
75
o
C
50
o
C
25
o
C
0
o
C
25
o
C
2
0.1
0.01
0
0
2
4
6
8
10
12
14
16
18
20
REVERSE VOLTAGE, (V)
0
20
30
40
50
60
70
80
REVERSE VOLTAGE, (V)
FIG. 5 - REVERSE RECOVERY TIME
10
REVERSE RECOVERY TIME, (nS)
9
8
7
6
5
4
3
2
1
0
0
1
2
3
4
5
6
7
8
9
10
FORWARD CURRENT, (mA)
VR=6V
FIG. 6 - REVERSE RECOVERY TIME MEASUREMENT CIRCUIT
0.01µF
D.U.T.
5
PULSE GENERATOR
OUTPUT 50
50
SAMPLING
OSCILLOSCOPE
51mcu
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