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MUR110S

Description
ultrafast efficient plastic silicon rectifier voltage: 50 to 1000v current: 1.0A
CategoryDiscrete semiconductor    diode   
File Size91KB,3 Pages
ManufacturerGulf Semiconductor
Websitehttp://www.gulfsemi.com/
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MUR110S Overview

ultrafast efficient plastic silicon rectifier voltage: 50 to 1000v current: 1.0A

MUR110S Parametric

Parameter NameAttribute value
MakerGulf Semiconductor
package instructionO-PALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOW POWER LOSS
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-204AL
JESD-30 codeO-PALF-W2
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage100 V
Maximum reverse recovery time0.025 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
MUR105S
THRU
MUR1100S
ULTRAFAST EFFICIENT
PLASTIC SILICON RECTIFIER
Voltage: 50 to 1000V
Current: 1.0A
FEATURE
Low power loss
High surge capability
Glass passivated chip junction
Ultra-fast recovery time for high efficiency
High temperature soldering guaranteed
250℃/10sec/0.375″lead length at 5 lbs tension
DO – 41\DO – 204AL
MECHANICAL DATA
Terminal:Plated axial leads solderable per
MIL-STD 202E, method 208C
Case:Molded with UL-94 Class V-0 recognized Flame
Retardant Epoxy
Polarity:color band denotes cathode
Mounting position:any
Dimensions in inches and (millimeters)
MAXIMUM
RATINGS AND ELECTRICAL
CHARACTERISTICS
(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25° unless otherwise stated,
C,
for capacitive load, derate current by 20%)
Symbol
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC blocking Voltage
Maximum Average Forward Rectified
Current 3/8" lead length at Ta =55°C
Peak Forward Surge Current 8.3ms single
Half sine-wave superimposed on rated load
Maximum Instantaneous Forward Voltage at
Rated forward current
Maximum DC Reverse Current Ta =25°
C
At rated DC blocking voltage
Ta =125°
C
Maximum Reverse Recovery Time (Note 1)
Typical Junction Capacitance
Typical Thermal Resistance
Storage
and
Temperature
Note:
1. Reverse Recovery Condition If
=0.5A,
Ir =1.0A, Irr =0.25A
2. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc
3. Thermal Resistance from Junction to Ambient at 3/8″lead length, P.C. Board Mounted
MUR
105S
50
35
50
MUR
110S
100
70
100
MUR
120S
200
140
200
MUR
130S
300
210
300
MUR
140S
400
280
400
1.0
MUR
160S
600
420
600
MUR
180S
800
560
800
MUR
1100S
1000
700
1000
units
V
V
V
A
A
Vrrm
Vrms
Vdc
If(av)
Ifsm
Vf
Ir
Trr
Cj
Rth(ja)
Tstg, Tj
35.0
0.875
1.25
10.0
100.0
25
25
27
-55 to +150
50
50
75
1.75
V
µA
nS
pF
/W
°C
(Note 2)
(Note 3)
Junction
Operating

MUR110S Related Products

MUR110S MUR1100S MUR105S
Description ultrafast efficient plastic silicon rectifier voltage: 50 to 1000v current: 1.0A ultrafast efficient plastic silicon rectifier voltage: 50 to 1000v current: 1.0A ultrafast efficient plastic silicon rectifier voltage: 50 to 1000v current: 1.0A
Maker Gulf Semiconductor Gulf Semiconductor Gulf Semiconductor
package instruction O-PALF-W2 O-PALF-W2 O-PALF-W2
Reach Compliance Code unknown unknown unknown
ECCN code EAR99 EAR99 EAR99
Other features LOW POWER LOSS LOW POWER LOSS LOW POWER LOSS
Shell connection ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JEDEC-95 code DO-204AL DO-204AL DO-204AL
JESD-30 code O-PALF-W2 O-PALF-W2 O-PALF-W2
Number of components 1 1 1
Number of terminals 2 2 2
Maximum operating temperature 150 °C 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C -55 °C
Maximum output current 1 A 1 A 1 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM
Maximum repetitive peak reverse voltage 100 V 1000 V 50 V
Maximum reverse recovery time 0.025 µs 0.075 µs 0.025 µs
surface mount NO NO NO
Terminal form WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL
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