CHA5042
13–16GHz High Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA5042 is a three-stage pHEMT
HPA MMIC designed for VSAT ground
terminals and other radio applications. The
CHA5042 provides 29.5dBm nominal
output power at 1dB gain compression
over the 13-16GHz frequency range, and
26dB small-signal gain. This product will be
available in chip form.
Main Features
¾
¾
¾
¾
¾
¾
¾
¾
Frequency Range:
13-16GHz
Gain:
26dB
Output Power (P-1dB): 29.5dBm
Output TOI:
37.5dBm
Input Return Loss:
15dB
Output Return Loss: 15dB
Bias:
9V, 0.4A
Dimensions: 1.37 x 1.33 x 0.07 mm
Predicted
30
Gain
&
Return
0
25
GAIN (dB)
-5
S. S. GAIN (dB)
20
Output Return
Loss (dB)
-10
15
-15
10
Input Return Loss (dB)
-20
5
11
12
13
14
15
16
17
18
FREQUENCY (GHz)
-25
Ref. : DSCHA50422218 -06-Aug.-02
1/6
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA5042
13-16GHz High Power Amplifier
Predicted Output Power at 1dB Gain compression
32
31.5
OUTPUT POWER (P-1dB) (dBm)
31
30.5
30
29.5
29
28.5
28
27.5
27
12
13
14
15
16
17
FREQUENCY (GHz)
Symbol
Vds
Ids
Vgs
Vdg
Pin
Ta
Tstg
•
•
•
Parameter
Drain bias voltage_small signal
Drain bias current_small signal
Gate bias voltage
Maximum Drain Gate voltage (Vd-Vg)
Maximum peak input power overdrive (2)
Operating Temperature Range (3)
Storage Temperature Range
Values
10.5
650
-2 to +0.4
+12
+18
-45 to +80
-55 to +125
Unit
V
mA
V
V
dBm
C
C
Operation of this device above any one of these parameters may cause
permanent damage.
Duration < 1 s
AuSn solder mount to CuW or CuMo carrier assumed
Ref. : DSCHA50422218 -06-Aug.-02
2/6
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
13-16GHz High Power Amplifier
CHA5042
Schematic
Vd1
Vd2
Vd3
RF
RF Out
Vg1
Vg2
Vg3
Typical Bias Conditions
Tamb. = 25
°C
Symbol
Vd 1, 2, 3
Vg 1, 2, 3
Idd
Parameter
Drain bias voltage
Gate bias voltage
Total drain current
Values
9.0
-0.5
400
Unit
V
V
mA
Ref. : DSCHA50422218 -06-Aug.-02
3/6
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
CHA5042
13-16GHz High Power Amplifier
MMIC Outline & Bond Pads
Not to scale, dimensions are in millimeters
2
1
1.33
±0.35
3
4
5
8
(0, 0)
7
6
1.37
±0.35
Bond Pad
1
2
3
4
5
6
7
8
Symbol
RF input
Vd1
Vd2
Vd3
RF output
Vg3
Vg2
Vg1
x-dim.
y-dim.
x-center
y-center
(um)
100
100
100
100
100
100
100
100
(um)
200
100
90
100
200
100
100
100
(um)
100
285
450
1120
1285
1280
895
505
(um)
820
1230
1230
1235
790
155
105
105
Chip size : 1370µm +/-35µm x 1330µm +/- 35µm
Ref. : DSCHA50422218 -06-Aug.-02
4/6
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
13-16GHz High Power Amplifier
CHA5042
MMIC Assembly and Bonding Diagram ( not to scale )
V
D
100p
0.01µ
100p
50 Ohm line
VD1 VD2
VD3
50 Ohm line
RFin
R
F
IN
R
F
O
U
RFout
VG1
VG2
VG3
100p
100p
V
g
0.01µ
Ref. : DSCHA50422218 -06-Aug.-02
5/6
Specifications subject to change without notice
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
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