LED - Chip
discontinued
Radiation
Infrared
460
360
300
ELC-980-28-1
10.04.2007
Type
MQW
Technology
InGaAs/GaAs
rev. 03/06
Electrodes
N (cathode) up
typ. dimensions (µm)
typ. thickness
260 (±20) µm
cathode
gold alloy, 1.5 µm
anode
gold alloy, 0.5 µm,
solder able
PD-02
Optical and Electrical Characteristics
T
amb
= 25°C, unless otherwise specified
Test
Parameter
conditions
Forward voltage
Reverse voltage
Radiant power
1
Radiant power
2
Peak wavelength
Spectral bandwidth at 50%
Switching time
1
2
Symbol
Min
Typ
Max
Unit
I
F
= 100 mA
I
R
= 10 µA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
V
F
V
R
Φ
e
Φ
e
λ
p
∆λ
0.5
t
r
, t
f
970
5
0.5
1.2
1.5
V
V
1.0
2.0
980
80
10
1000
mW
mW
nm
nm
ns
Measured on bare chip on TO-18 header with
EPIGAP
equipment
Measured on epoxy covered chip on TO-18 header with
EPIGAP
equipment
Labeling
Type
ELС-980-28-1
Lot N°
Φ
e
(typ) [mW]
V
F
(typ) [V]
Quantity
Packing:
Chips on adhesive film with wire-bond side on top
EPIGAP
Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545
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