TC58FVT160/B160AFT/AXB-70,-10
TENTATIVE
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
16-MBIT (2M
×
8 BITS / 1M
×
16 BITS) CMOS FLASH MEMORY
DESCRIPTION
The TC58FVT160/B160A is a 16,777,216-bit, 3.0-V read-only electrically erasable and programmable flash
memory organized as 2,097,152 words
×
8 bits or as 1,048,576 words
×
16 bits. The TC58FVT160/B160A features
commands for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands
are based on the JEDEC standard. The Program and Erase operations are automatically executed in the chip.
FEATURES
•
•
•
•
Power supply voltage
V
DD
=
2.7 V~3.6 V
Operating temperature
Ta
= −40°C~85°C
Organization
2M
×
8 bits / 1M
×
16 bits
Functions
Auto Program, Auto Erase
Fast Program Mode
Program Suspend/Resume
Erase Suspend/Resume
data polling / Toggle bit
block protection
Automatic Sleep, support for hidden ROM area
common flash memory interface (CFI)
Byte/Word Modes
•
•
•
•
•
•
Block erase architecture
1
×
16 Kbytes / 2
×
8 Kbytes
1
×
32 Kbytes / 31
×
64 Kbytes
Boot block architecture
TC58FVT160AFT/AXB: top boot block
TC58FVB160AFT/AXB: bottom boot block
Mode control
Compatible with JEDEC standard commands
Erase/Program cycles
10
5
cycles typ.
Access time
70 ns
(C
L
: 30 pF)
100 ns
(C
L
: 100 pF)
Power consumption
5
µA
(Standby)
30 mA
(Read operation)
15 mA
(Program/Erase operations)
Package
TSOPI48-P-1220-0.50 (weight: 0.51 g)
P-TFBGA48-0608-0.80AZ (weight: TBD)
•
PIN ASSIGNMENT
(TOP VIEW)
…
TC58FVT160/B160AFT
A15
A14
A13
A12
A11
A10
A9
A8
A19
NC
WE
RESET
NC
NC
RY/BY
A18
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
PIN NAMES
A16
BYTE
V
SS
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
V
DD
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE
V
SS
CE
A0
A-1, A0~A19
DQ0~DQ15
CE
OE
Address Input
Data Input/Output
Chip Enable Input
Output Enable Input
Word/Byte Select Input
Write Enable Input
Ready/Busy Output
Hardware Reset Input
Not Connected
Power Supply
Ground
BYTE
WE
RY/BY
RESET
NC
V
DD
V
SS
000707EBA2
•
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general
can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid
situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to
property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most
recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide
for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
•
The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal
equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are
neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or
failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control
instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document
shall be made at the customer’s own risk.
2001-09-05 1/41
TC58FVT160/B160AFT/AXB-70,-10
MODE SELECTION
BYTE MODE
MODE
Read
ID Read (Manufacturer Code)
ID Read (Device Code)
Standby
Output Disable
Write
Block Protect 1
Verify Block Protect
Temporary Block Unprotect
Hardware Reset / Standby
CE
OE
WORD MODE
DQ0~DQ15
D
OUT
Code
Code
High-Z
High-Z
D
IN
*
Code
*
High-Z
WE
H
H
H
*
H
(2)
(2)
A9
A9
V
ID
V
ID
*
*
A9
V
ID
V
ID
*
*
A6
A6
L
L
*
*
A6
L
L
*
*
A1
A1
L
L
*
*
A1
H
H
*
*
A0
A0
L
H
*
*
A0
L
L
*
*
RESET
DQ0~DQ7
D
OUT
Code
Code
High-Z
High-Z
D
IN
*
Code
*
High-Z
(1)
L
L
L
H
*
L
L
L
*
*
L
L
L
*
H
H
V
ID
L
*
*
H
H
H
H
*
H
H
H
V
ID
L
H
*
*
Notes:
*
=
V
IH
or V
IL
, L
=
V
IL
, H
=
V
IH
(1) DQ8~DQ14 are High-Z and DQ15/A-1 is Address Input in Byte Mode.
Addresses are A19~A0 in Word Mode ( BYTE
=
V
IH
), A19~A-1 in Byte Mode ( BYTE
=
V
IL
).
(2) Pulse input
ID CODE TABLE
CODE TYPE
Manufacturer Code
TC58FVT160A
Device Code
TC58FVB160A
Verify Block Protect
*
BA
(2)
A19~A12
*
*
A6
L
L
L
L
A1
L
L
L
H
A0
L
H
H
L
CODE (HEX)
0098H
00C2H
0043H
Data
(3)
(1)
Notes:
*
=
V
IH
or V
IL
, L
=
V
IL
, H
=
V
IH
(1) DQ8~DQ14 are High-Z and DQ15/A-1 is Address Input in Byte Mode.
(2) BA: Block Address
(3) 0001H - Protected Block
0000H - Unprotected Block
2001-09-05 4/41
TC58FVT160/B160AFT/AXB-70,-10
COMMAND SEQUENCES
BUS
COMMAND
SEQUENCE
WRITE
CYCLES
REQ’D
Read/Reset
Read/Reset
Word
Byte
ID Read
Word
Byte
Auto-Program
Word
Byte
Program Suspend
1
4
3
1
3
Addr.
XXXH
555H
AAAH
555H
AAAH
555H
AAAH
V
IH
or
V
IL
V
IH
or
V
IL
555H
AAAH
6
555H
AAAH
1
V
IH
or
V
IL
V
IH
or
V
IL
XXXH
555H
AAAH
3
2
2
3
555H
AAAH
XXXH
XXXH
555H
AAAH
4
555H
AAAH
6
555H
AAAH
4
555H
AAAH
2
55H
AAH
98H
AAH
AAH
AAH
A0H
90H
AAH
AAH
B0H
AAH
B0H
AAH
AAH
Data
F0H
AAH
2AAH
555H
2AAH
555H
2AAH
555H
55H
55H
55H
555H
AAAH
555H
AAAH
555H
AAAH
A0H
PA
(5)
FIRST BUS
WRITE CYCLE
SECOND BUS
WRITE CYCLE
Addr.
Data
THIRD BUS
WRITE CYCLE
Addr.
Data
FOURTH BUS
WRITE CYCLE
Addr.
Data
FIFTH BUS
WRITE CYCLE
Addr.
Data
SIXTH BUS
WRITE CYCLE
Addr.
Data
F0H
RA
(1)
RD
(2)
90H
IA
(3)
ID
(4)
PD
(6)
Program Resume
Auto Chip
Erase
Auto Block
Erase
Word
Byte
Word
Byte
1
30H
2AAH
555H
2AAH
555H
55H
555H
AAAH
555H
AAAH
80H
555H
AAAH
555H
AAAH
AAH
2AAH
555H
2AAH
555H
55H
555H
AAAH
BA
(7)
6
AAH
55H
80H
AAH
55H
10H
30H
Block Erase Suspend
Block Erase Resume
Block Protect 2
Verify Block
Protect
Fast Program
Set
Fast Program
Fast Program Reset
Hidden ROM
Mode Entry
Hidden ROM
Program
Hidden ROM
Erase
Hidden ROM
Mode Exit
Query
Command
Word
Byte
Word
Byte
Word
Byte
Word
Byte
Word
Byte
Word
Byte
Word
Byte
1
4
3
30H
60H
AAH
BPA
(8)
60H
55H
XXXH
555H
AAAH
40H
90H
BPA
BPA
(8)
(8)
BPD
BPD
(9)
(9)
2AAH
555H
2AAH
555H
PA
(5)
55H
PD
F0H
(6)
555H
AAAH
20H
XXXH
2AAH
555H
2AAH
555H
2AAH
555H
2AAH
555H
CA
(10)
(12)
55H
555H
AAAH
88H
(5)
(6)
55H
555H
AAAH
A0H
PA
PD
55H
555H
AAAH
80H
555H
AAAH
AAH
2AAH
555H
55H
BA
(7)
30H
55H
(11)
555H
AAAH
90H
XXXH
00H
CD
Notes: The system should generate the following address patterns:
Word Mode: 555H or 2AAH on address pins A10~A0
Byte Mode: AAAH or 555H on address pins A10~A-1
DQ8~DQ15 are ignored in Word Mode.
(1) RA: Read Address
(7) BA: Block Address
=
A19~A12
(2) RD: Read Data
(8) BPA: Block Address and ID Read Address (A6, A1, A0)
(3) IA: ID Read Address (A6, A1, A0)
Block Address
=
A19~A12
Manufacturer Code
=
(0, 0, 0)
ID Read Address
=
(0, 1, 0)
Device Code
=
(0, 0, 1)
(9) BPD: Verify Data
(4) ID: ID Data
(10) CA: CFI Address
(5) PA: Program Address
(11) CD: CFI Data
(6) PD: Program Data
(12) F0H: 00H is valid too
2001-09-05 5/41
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