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MRF629

Description
npn silicon RF power transistor
File Size147KB,1 Pages
ManufacturerASI [ASI Semiconductor, Inc]
Download Datasheet View All

MRF629 Overview

npn silicon RF power transistor

MRF629
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The
ASI MRF629
is Designed for
UHF large signal, FM Land Mobile
Applications up to 470 MHz.
PACKAGE STYLE TO 205AD
MILLIMETER
S
MIN
MAX
FEATURES:
Grounded Emitter
P
G
= 8.0 dB at 2.0 W/470 MHz
Omnigold™
Metalization System
DIM
INCHES
MIN
MAX
MAXIMUM RATINGS
I
C
V
CEO
V
CES
V
EBO
P
DISS
T
J
T
STG
θ
JC
400 mA
16 V
36 V
4.0 V
5.0 W @ T
C
= 25 °C
-65 °C to +200 °C
-65 °C to +200 °C
35 °C/W
A
B
C
D
E
F
G
H
J
K
L
M
P
R
9.02 9.29
8.01 8.50
4.20 4.57
0.44 0.53
0.44 0.88
0.41 0.48
5.08 BSC
0.72 0.86
0.74 0.01
12.70 19.05
6.35
--
45° BSC
--
1.27
2.54
--
0.355 0.366
0.315 0.335
0.165 0.180
0.017 0.021
0.017 0.035
0.016 0.019
0.200 BSC
0.028 0.034
0.029 0.040
0.500 0.750
0.25
--
45 °BSC
--
0.050
0.10
--
1 = COLLECTOR
2 = BASE
3 = EMITTER
CHARACTERISTICS
SYMBOL
BV
CEO
BV
CES
BV
EBO
I
CBO
h
FE
C
OB
P
G
η
C
I
C
= 50 mA
I
C
= 50 mA
I
E
= 1.0 mA
V
CB
= 15 V
T
C
= 25 °C
NONETEST
CONDITIONS
MINIMUM TYPICAL MAXIMUM
16
36
4.0
1.0
UNITS
V
V
V
mA
---
pF
dB
%
V
CE
= 5.0 V
V
CB
= 12.5 V
V
CC
= 12.5 V
I
C
= 100 mA
f = 1.0 MHz
P
OUT
= 2.0 W
f = 470 MHz
20
200
15
8.0
50
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
NORTH HOLLYWOOD, CA 91605
(818) 982-1200
FAX (818) 765-3004
Specifications are subject to change without notice.
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