EMA109
UPDATED 11/11/2004
0.5 – 3.0 GHz High Linearity Power MMIC
FEATURES
•
•
•
•
•
•
0.5 – 3.0 GHz BANDWIDTH
24.0dBm TYPICAL OUTPUT POWER
-45dBc OIMD3 @ 14dBm EACH TONE Pout
11.0 dB TYPICAL POWER GAIN
SINGLE BIAS SUPPLY
100% DC TESTED
Dimension: 760um X 700um
ELECTRICAL CHARACTERISTICS (T
a
= 25°C)
SYMBOL
F
P
1dB
Gss
IMD3
RL
IN
RL
OUT
I
DD
R
TH
PARAMETER/TEST CONDITIONS
1
Operating Frequency Range
Power at 1dB Compression
V
DD
= 8.0V, F = 2.4G
Caution! ESD sensitive device.
MIN
0.5
23.0
10.0
24.0
11.0
-45
-12
-12
90
120
70
-42
-8
-8
150
o
TYP
MAX
3.0
UNITS
GHz
dBm
dB
dBc
dB
dB
mA
C/W
Small Signal Gain
V
DD
= 8.0V, F = 2.4G
rd
Output 3 Order Intermodulation Distortion
@∆f=10MHz, Each Tone Pout 14dBm
V
DD
= 8.0V, F = 2.4G
Input Return Loss
Output Return Loss
Drain Current
Thermal Resistance
1
V
DD
= 8.0V
V
DD
= 8.0V
Note: 1. Overall Rth depends on die attach.
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION
1,2
SYMBOL
V
DD
V
GG
I
DD
I
GSF
P
IN
P
T
T
CH
T
STG
Gate Voltage
Drain Current
Forward Gate Current
Input Power
Total Power Dissipation
Channel Temperature
Storage Temperature
CHARACTERISTIC
Power Supply Voltage
VALUE
8V
-3 V
IDSS
10 mA
@ 3dB compression
1.4 W
150°C
-65/+150°C
Notes: 1. Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF.
2. Bias conditions must also satisfy the following equation P
T
< (T
CH
–T
HS
)/R
TH
; where T
HS
= temperature of heatsink,
and P
T
= (V
DD
* I
DD
) – (P
OUT
– P
IN
).
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 1 of 3
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised November 2004
EMA109
UPDATED 11/11/2004
0.5 – 3.0 GHz High Linearity Power MMIC
Typical Performance:
1. P-1 VS VD
EMA109C P-1(dBm) VS VD
25
24
P-1 (dBm)
23
22
21
20
0
0.5
1
1.5
2
2.5
3
Frequency (GHz)
VD=5.5V
VD=6.5V
VD=8V
2. G-1 VS VD
EMA109C G-1(dB) VS VD
14
13
G-1 (dB)
12
11
10
9
0
0.5
1
1.5
2
2.5
3
Frequency (GHz)
VD=5.5V
VD=6.5V
VD=8V
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 2 of 3
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised November 2004
EMA109
UPDATED 11/11/2004
0.5 – 3.0 GHz High Linearity Power MMIC
Typical Performance:
3. OIP3 VS VD
EMA109C OIP3 VS VD
43
41
39
37
35
33
31
29
27
25
0
5
10
15
20
Each Tone Pout (dBm)
OIP3 (dBm)
VD=8V
VD=6.5V
VD=5.5V
4. Small Signal Performance
EMA109C Small Signal Performance
20
15
10
5
0
-5
-10
-15
-20
-25
-30
DB(|S[1,1]|) *
DB(|S[2,1]|) *
DB(|S[2,2]|) *
0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5 2.7 2.9 3
Frequency (GHz)
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
page 3 of 3
Phone: 408-737-1711 Fax: 408-737-1868 Web:
www.excelics.com
Revised November 2004
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