Complementary Dual Enhancement Mode MOSFET
STC4516
8.5A for N Channel / -7.2A for P Channl
DESCRIPTION
STC4516 is the complementary enhancement mode power field effect transistor using
high cell density, DMOS trench technology. This high density process is especially
tailored to minimize on-state resistance.
PIN CONFIGURATION
SOP-8
Top View
FEATURE
P Channel
-30V/-7.2A, R
DS(ON)
= 22m-ohm (Typ.)
@V
GS
=-10V
-30V/-5.6A, R
DS(ON)
= 40m-ohm
@V
GS
=-4.5V
N Channel
30V/8.5A, R
DS(ON)
= 10m-ohm
@V
GS
=10V
30V/7.8A, R
DS(ON)
= 16m-ohm
@V
GS
=4.5V
Super high density cell design for extremely
low R
DS(ON)
SOP-8 package design
8
D1
7
D1
6
D2
5
D2
STC5416
YA
1
S1
2
G1
3
S2
4
G2
N-Channel MOSFET
P-Channel MOSFET
Y: Year Code
A: Process Code
ORDERING INFORMATION
Part Number
STC4516S8RG
STC4516S8TG
Package
SOP-8
SOP-8
Part Marking
STC4516
STC4516
※
Process Code : A ~ Z ; a ~ z
※
STC4516S8RG S8 : SOP-8 ; R : Tape Reel ; G : Pb – Free
※
STC4516S8TG S8 : SOP-8 ; T : Tube ; G : Pb – Free
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STC4516 2008 V1
Complementary Dual Enhancement Mode MOSFET
STC4516
8.5A for N Channel / -7.2A for P Channl
ABSOULTE MAXIMUM RATINGS
(Ta = 25℃ unless otherwise noted )
P-Channel
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Power Dissipation
Operation Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
T
A
=25℃
T
A
=70℃
T
A
=25℃
T
A
=70℃
Symbol
V
DSS
V
GSS
I
D
I
DM
I
S
P
D
T
J
T
STG
R
θJA
Typical
-30
+/-20
-7.2
-5.6
-20
-2.3
2.8
1.8
-55/150
-55/150
80
Unit
V
V
A
A
A
W
℃
℃
℃
/W
N-Channel
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Power Dissipation
Operation Junction Temperature
Storage Temperature Range
Thermal Resistance-Junction to Ambient
T
A
=25℃
T
A
=100℃
T
A
=25℃
T
A
=70℃
Symbol
V
DSS
V
GSS
I
D
I
DM
I
S
P
D
T
J
T
STG
R
θJA
Typical
30
+/-20
8.5
7.5
20
2.3
2.5
1.6
-55/150
-55/150
80
Unit
V
V
A
A
A
W
℃
℃
℃
/W
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STC4516 2008 V1
Complementary Dual Enhancement Mode MOSFET
STC4516
8.5A for N Channel / -7.2A for P Channl
ELECTRICAL CHARACTERISTICS
( Ta = 25
℃
Unless otherwise noted )
P-Channel
Parameter
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain
Current
On-State Drain Current
Drain-source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
T
d(on)
t
r
T
d(off)
t
f
V
DS
=-15V,V
GS
=-10V
I
D=
-7.2A
16
23
4.5
1650
350
235
16
17
65
35
30
30
110
80
pF
nC
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
V
GS
=0V,I
D
=-250uA
V
DS
=V
GS
,I
D
=-250uA
V
DS
=0V,V
GS
=+20V
V
DS
=-30V,V
GS
=0V
V
DS
=-30V,V
GS
=0V
T
J
=55℃
V
DS
≥-5V,V
GS
=-10V
V
GS
=-10V,I
D
=-7.2A
V
GS
=-4.5V,I
D
=-5.6A
V
DS
=-10V,I
D
=-7.2A
I
S
=-2.3A,V
GS
=0V
-30
-1.0
-3.0
+100
-1
-5
-40
0.022
0.030
24
-0.8
-1.2
V
V
nA
uA
A
Ω
S
V
Symbol
Condition
Min
Typ
Max Unit
I
D(on)
R
DS(on)
gfs
V
SD
V
DS
=-15V,V
GS
=0V
f=1MHz
V
DD
=-15V,R
L
=15Ω
I
D
=-1A,V
GEN
=-10V
RG=6Ω
nS
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STC4516 2008 V1
Complementary Dual Enhancement Mode MOSFET
STC4516
8.5A for N Channel / -7.2A for P Channl
ELECTRICAL CHARACTERISTICS
( Ta = 25
℃
Unless otherwise noted )
-N-Channel
Parameter
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Gate Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Turn-Off Time
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
T
d(on)
t
r
T
d(off)
t
f
V
DS
=15V,V
GS
=10V
I
D=
2A
16
4.2
2.5
1350
258
150
15
6
20
12
20
16
40
20
pF
24
nC
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
V
SD
V
GS
=0V,I
D
=250uA
V
DS
=V
GS
,I
D
=250uA
V
DS
=0V,V
GS=
+20V
V
DS
=24V,V
GS
=0V
V
DS
=24V,V
GS
=0V
T
J
=55℃
V
DS
≧
5V,V
GS
=10V
V
GS
=10V,I
D
=8.5A
V
GS
=4.5V,I
D
=7.8A
V
DS
=15V,I
D
=6.2A
I
S
=-2.3A,V
GS
=0V
25
0.010
0.013
13
0.8
1.2
30
1.0
3.0
+100
1
5
V
V
nA
uA
A
Ω
S
V
Symbol
Condition
Min
Typ
Max Unit
V
DS
=15V,V
GS
=0V
f=1MHz
V
DD
=15V,R
L
=15Ω
I
D
=5.0A,V
GEN
=10V
RG=1Ω
nS
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STC4516 2008 V1
Complementary Dual Enhancement Mode MOSFET
STC4516
8.5A for N Channel / -7.2A for P Channl
TYPICAL CHARACHTERISTICS (N MOS)
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STC4516 2008 V1
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