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STC4516S8TG

Description
complementary dual enhancement mode mosfet
File Size914KB,9 Pages
ManufacturerStanson Technology
Websitehttp://www.stansontech.com/
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STC4516S8TG Overview

complementary dual enhancement mode mosfet

Complementary Dual Enhancement Mode MOSFET
STC4516
8.5A for N Channel / -7.2A for P Channl
DESCRIPTION
STC4516 is the complementary enhancement mode power field effect transistor using
high cell density, DMOS trench technology. This high density process is especially
tailored to minimize on-state resistance.
PIN CONFIGURATION
SOP-8
Top View
FEATURE
P Channel
-30V/-7.2A, R
DS(ON)
= 22m-ohm (Typ.)
@V
GS
=-10V
-30V/-5.6A, R
DS(ON)
= 40m-ohm
@V
GS
=-4.5V
N Channel
30V/8.5A, R
DS(ON)
= 10m-ohm
@V
GS
=10V
30V/7.8A, R
DS(ON)
= 16m-ohm
@V
GS
=4.5V
Super high density cell design for extremely
low R
DS(ON)
SOP-8 package design
8
D1
7
D1
6
D2
5
D2
STC5416
YA
1
S1
2
G1
3
S2
4
G2
N-Channel MOSFET
P-Channel MOSFET
Y: Year Code
A: Process Code
ORDERING INFORMATION
Part Number
STC4516S8RG
STC4516S8TG
Package
SOP-8
SOP-8
Part Marking
STC4516
STC4516
Process Code : A ~ Z ; a ~ z
STC4516S8RG S8 : SOP-8 ; R : Tape Reel ; G : Pb – Free
STC4516S8TG S8 : SOP-8 ; T : Tube ; G : Pb – Free
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STC4516 2008 V1

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STC4516S8TG STC4516S8RG STC4516
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