BYV26F datasheet, PDF - EEWORLD Datasheet

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BYV26F: Descriptionsintered glass junction fast avalanche rectifier voltage？？?1200v current: 1.05a; CategoryDiscrete semiconductor diode; File Size66KB，2 Pages; ManufacturerGulf Semiconductor; Websitehttp://www.gulfsemi.com/

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BYV26F Overview

sintered glass junction fast avalanche rectifier voltage？？?1200v current: 1.05a

BYV26F Parametric

Parameter Name	Attribute value
Maker	Gulf Semiconductor
package instruction	E-LALF-W2
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	LOW LEAKAGE CURRENT
application	FAST RECOVERY
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	2.15 V
JESD-30 code	E-LALF-W2
Maximum non-repetitive peak forward current	30 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	175 °C
Minimum operating temperature	-65 °C
Maximum output current	1.05 A
Package body material	GLASS
Package shape	ELLIPTICAL
Package form	LONG FORM
Maximum repetitive peak reverse voltage	1200 V
Maximum reverse current	5 µA
Maximum reverse recovery time	0.15 µs
surface mount	NO
technology	AVALANCHE
Terminal form	WIRE
Terminal location	AXIAL

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BYV26F

SINTERED GLASS JUNCTION

FAST AVALANCHE RECTIFIER

VOLTAGE：1200V

：

CURRENT: 1.05A

FEATURE

Glass passivated

High maximum operating temperature

Low leakage current

Excellent stability

Guaranteed avalanche energy absorption capability

SOD-57

MECHANICAL DATA

Case: SOD-57 sintered glass case

Terminal: Plated axial leads solderable per

MIL-STD 202E, method 208C

Polarity: color band denotes cathode end

Mounting position: any

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated)

SYMBOL

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC blocking Voltage

Reverse avalanche breakdown voltage

IR = 0.1 mA

Maximum Average Forward Rectified

Current 3/8”lead length at Ttp =85°C

Non-repetitive Peak Forward Current at t=10ms half

sine wave

BYV26F

1200

910

1200

1300min

1.05

2.15

5.0

150.0

150

100

-65 to +175

units

µA

K/W

°C

RRM

RMS

(BR)R

FAV

FSM

RSM

Trr

th(ja)

Tstg, Tj

Maximum Forward Voltage at 1.0A

Non-repetitive peak reverse avalanche energy

(Note 1)

Maximum DC Reverse Current

Ta =25°C

at rated DC blocking voltage

Ta =165°C

Maximum Reverse Recovery Time

(Note 2)

Diode Capacitance

(Note 3)

Typical Thermal Resistance

(Note 4)

Storage and Operating Junction Temperature

Note:

1. I

=400mA; Tj=Tjmax prior to surge; inductive load switched off

2. Reverse Recovery Condition If

=0.5A,

Ir =1.0A, Irr =0.25A

3. Measured at 1.0 MHz and applied reverse voltage of 0Vdc

4. Device mounted on an epoxy-glass printed-circuit board, 1.5mm thick

Rev.A1

www.gulfsemi.com

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