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TG2210FT

Description
RF SPDT Switch
CategoryWireless rf/communication    Radio frequency and microwave   
File Size133KB,7 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

TG2210FT Overview

RF SPDT Switch

TG2210FT Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
package instructionTSSOP6,.08
Reach Compliance Codeunknow
Characteristic impedance50 Ω
structureCOMPONENT
Maximum input power (CW)30 dBm
Maximum insertion loss0.7 dB
Minimum isolation27 dB
Installation featuresSURFACE MOUNT
Number of functions1
Number of terminals6
on time0.2 µs
Maximum operating frequency1000 MHz
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Encapsulate equivalent codeTSSOP6,.08
power supply2.5 V
RF/Microwave Device TypesDIVERSITY SWITCH
surface mountYES
technologyGAAS
Base Number Matches1
TG2210FT
TOSHIBA GaAs Linear Integrated Circuit GaAs Monolithic
TG2210FT
RF SPDT Switch
Switch the receive filter for mobile communication.
Switch the diversity antenna.
Switch the local signal.
Features
·
·
·
·
Low insertion Loss: L
OSS
= 0.4dB (typ.)
High isolation: ISL = 30dB (typ.)
Low voltage operation: V
C
= 0 V/2.5 V
Small package: TU6 package (2.0 × 1.25 × 0.6 mm)
Weight: 0.008 g (typ.)
Pin Connection, Marking
(top view)
V
C1
6
RFcom
5
V
C2
4
UL
1
RF2
2
GND
3
RF1
Maximum Ratings
(Ta
=
25°C)
Characteristics
Control voltage
Input power
Operating temperature range
Storage temperature range
Symbol
V
C1
V
C2
P
i
T
opr
T
stg
Rating
5
5
1
-40~85
-55~125
Unit
V
V
W
°C
°C
Caution
This device is sensitive to electrostatic discharge. When using this device, please ensure that all tools and
equipment are earthed.
1
2002-07-30
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