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1N6289

Description
1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-201AD
CategoryDiscrete semiconductor    diode   
File Size67KB,8 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

1N6289 Overview

1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-201AD

1N6289 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerON Semiconductor
package instructionO-PALF-W2
Contacts2
Manufacturer packaging codeCASE 41A-04
Reach Compliance Code_compli
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Maximum breakdown voltage58.8 V
Minimum breakdown voltage53.2 V
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeO-PALF-W2
JESD-609 codee0
Maximum non-repetitive peak reverse power dissipation1500 W
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation5 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage47.8 V
surface mountNO
technologyZENER
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
1N6267A Series
1500 Watt Mosorb™ Zener
Transient Voltage
Suppressors
Unidirectional*
http://onsemi.com
Mosorb devices are designed to protect voltage sensitive
components from high voltage, high–energy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. These devices are
ON Semiconductor’s exclusive, cost-effective, highly reliable
Surmetic™ axial leaded package and are ideally-suited for use in
communication systems, numerical controls, process controls,
medical equipment, business machines, power supplies and many
other industrial/consumer applications, to protect CMOS, MOS and
Bipolar integrated circuits.
Specification Features:
Cathode
Anode
Working Peak Reverse Voltage Range – 5.8 V to 214 V
Peak Power – 1500 Watts @ 1 ms
ESD Rating of Class 3 (>16 KV) per Human Body Model
Maximum Clamp Voltage @ Peak Pulse Current
Low Leakage < 5
mA
Above 10 V
UL 497B for Isolated Loop Circuit Protection
Response Time is Typically < 1 ns
AXIAL LEAD
CASE 41A
PLASTIC
L
1N6
xxxA
1.5KE
xxxA
YYWW
L = Assembly Location
1N6xxxA = JEDEC Device Code
1.5KExxxA = ON Device Code
YY = Year
WW = Work Week
Mechanical Characteristics:
CASE:
Void-free, transfer-molded, thermosetting plastic
FINISH:
All external surfaces are corrosion resistant and leads are
readily solderable
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:
230°C, 1/16″ from the case for 10 seconds
POLARITY:
Cathode indicated by polarity band
MOUNTING POSITION:
Any
MAXIMUM RATINGS
Rating
Peak Power Dissipation (Note 1)
@ T
L
25°C
Steady State Power Dissipation
@ T
L
75°C, Lead Length = 3/8″
Derated above T
L
= 75°C
Thermal Resistance, Junction–to–Lead
Forward Surge Current (Note 2)
@ T
A
= 25°C
Operating and Storage
Temperature Range
Symbol
P
PK
P
D
Value
1500
5.0
20
R
qJL
I
FSM
T
J
, T
stg
20
200
– 65 to
+175
Unit
Watts
Watts
mW/°C
°C/W
Amps
°C
ORDERING INFORMATION
Device
1.5KExxxA
1.5KExxxARL4
1N6xxxA
1N6xxxARL4*
Package
Axial Lead
Axial Lead
Axial Lead
Axial Lead
Shipping
500 Units/Box
1500/Tape & Reel
500 Units/Box
1500/Tape & Reel
*1N6302A Not Available in 1500/Tape & Reel
Devices listed in
bold, italic
are ON Semiconductor
Preferred
devices.
Preferred
devices are recommended
choices for future use and best overall value.
1. Nonrepetitive current pulse per Figure 5 and derated above T
A
= 25°C per
Figure 2.
2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses
per minute maximum.
*Please see 1.5KE6.8CA to 1.5KE250CA for Bidirectional Devices
©
Semiconductor Components Industries, LLC, 2002
1
June, 2002 – Rev. 5
Publication Order Number:
1N6267A/D
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