3TA200GKxxNB
Three Phase Half Bridge
Dimensions in mm (1mm = 0.0394")
Type
3TA200GK03NB
3TA200GK04NB
V
RSM
V
400
500
V
RRM
V
300
400
Symbol
I
T(AV)
I
T(RMS)
I
TSM
I
2
t
P
GM
P
G(AV)
I
FGM
V
FGM
V
RGM
di/dt
T
VJ
T
VJM
T
stg
Ms
Mt
Weight
to heatsink M6
to terminals M5
Test Conditions
Single phase, half wave, 180
o
C conduction,T
C
=121
o
C
1/2cycle, 50Hz/60Hz, peak value, non-repetitive
Maximum Ratings
200
314
5400/6000
1499400
10
1
3
10
5
Unit
A
A
A
2
s
W
A
V
A/us
o
IG=200mA, Tj=25
o
C, V
D
=1/2V
DRM
, dI
G
/dt=1A/us
50
-40...+150
150
-40...+125
3 ~ 5
2.5 ~ 5
160
C
Nm
g
3TA200GKxxNB
Three Phase Half Bridge
Symbol
I
DRM
I
RRM
V
TM
I
GT
V
GT
V
GD
tgt
dv/dt
I
H
R
thJC
Test Conditions
at V
DRM,
single phase, half wave, Tj=150
o
C
On-State Current 630A, Tj=25
o
C Inst. measurement
Tj=25
o
C, I
T
=1A, V
D
=6V
Tj=150
o
C, V
D
=1/2V
DRM
I
T
=200A, I
G
=200mA, Tj=25
o
C, V
D
=1/2V
DRM
, dI
G
/dt=1A/us
Tj=150
o
C, V
D
=2/3V
DRM
, Exponential wave
Tj=25
o
C
Junction to case (1/3 Module)
min.
typ.
max.
60
60
1.20
150
2
Unit
mA
V
mA
V
V
0.25
10
200
70
0.12
o
us
V/us
mA
C/W
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