Low Saturation Voltage
PNP Silicon Driver Transistors
Part of the GreenLine
TM
Portfolio of devices with energy–conserving traits.
This PNP Silicon Epitaxial Planar Transistor is designed to conserve energy in
general purpose driver applications. This device is housed in the SOT-23 and
SC–59 packages which are designed for low power surface mount applications.
• Low V
CE(sat)
, < 0.1 V at 50 mA
Applications
• LCD Backlight Driver
• Annunciator Driver
• General Output Device Driver
1
2
MMBT1010LT1
MSD1010T1
PNP GENERAL
PURPOSE DRIVER
TRANSISTORS
SURFACE MOUNT
3
MAXIMUM RATINGS (T
A
= 25°C)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current — Continuous
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CASE 318–08, STYLE 6
Value
45
15
5.0
100
Unit
Vdc
Vdc
Vdc
mAdc
1
SOT– 23
3
I
C
THERMAL CHARACTERISTICS
Characteristic
Power Dissipation
T
A
=25 °C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature Range
R
θJA
T
J
T
stg
2
Symbol
P
D
(1)
Max
250
1.8
556
150
–55 —+150
Unit
mW
mW/°C
°C/W
°C
°C
CASE 318D –04, STYLE 1
SC– 59
COLLECTOR
DEVICE MARKING
MMBT1010LT1 = GLP; MSD1010T1 = GLP
BASE
EMITTER
ELECTRICAL CHARACTERISTICS
Characteristic
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Collector-Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Symbol
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
h
FE1
(2)
V
CE(sat)
(2)
Condition
I
C
= 10 mA, I
B
= 0
I
E
= 10
µA,I
E
= 0
V
CB
= 20 V, I
E
= 0
V
CE
= 10 V, I
B
= 0
V
CE
= 5 V,I
C
= 100 mA
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
I
C
= 100 mA, I
B
= 10 mA
I
C
= 100 mA, I
B
= 10 mA
Min
15
5.0
—
—
300
—
—
—
Max
—
—
0.1
100
600
0.1
0.1
0.19
1.1
Unit
Vdc
Vdc
µA
µA
—
Vdc
Base-Emitter Saturation Voltage
V
BE(sat)
(2)
Vdc
(1) Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
(2) Pulse Test: Pulse Width <300
µs,
D.C <2%.
O3–1/1
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