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TZM5247B

Description
silicon Z-diodes
CategoryDiscrete semiconductor    diode   
File Size59KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
Download Datasheet Parametric View All

TZM5247B Overview

silicon Z-diodes

TZM5247B Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerVishay
Parts packaging codeDO-213AA
package instructionO-LELF-R2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
JEDEC-95 codeDO-213AA
JESD-30 codeO-LELF-R2
JESD-609 codee2
Humidity sensitivity level1
Number of components1
Number of terminals2
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)260
polarityUNIDIRECTIONAL
Maximum power dissipation0.5 W
Certification statusNot Qualified
Nominal reference voltage17 V
surface mountYES
technologyZENER
Terminal surfaceTIN SILVER
Terminal formWRAP AROUND
Terminal locationEND
Maximum time at peak reflow temperatureNOT SPECIFIED
Maximum voltage tolerance5%
Working test current7.4 mA
TZM5221B...TZM5267B
Vishay Telefunken
Silicon Z–Diodes
Features
D
Very sharp reverse characteristic
D
Very high stability
D
Electrical data identical with the devices
1N5221B...1N5267B
D
Low reverse current level
D
V
Z
–tolerance
±
5%
Applications
Voltage stabilization
94 9371
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Power dissipation
Z–current
Junction temperature
Storage temperature range
Test Conditions
R
thJA
<300K/W, T
amb
=25
°
C
Type
Symbol
P
V
I
Z
T
j
T
stg
Value
500
P
V
/V
Z
175
–65...+175
Unit
mW
mA
°
C
°
C
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Test Conditions
Junction ambient on PC board 50mmx50mmx1.6mm
Symbol
R
thJA
Value
500
Unit
K/W
Electrical Characteristics
T
j
= 25
_
C
Parameter
Forward voltage
Test Conditions
I
F
=200mA
Type
Symbol
V
F
Min
Typ
Max
1.1
Unit
V
Document Number 85609
Rev. 2, 01-Apr-99
www.vishay.de
FaxBack +1-408-970-5600
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