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1N6291

Description
1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-201AE
Categorysemiconductor    Discrete semiconductor   
File Size91KB,6 Pages
ManufacturerGE Sensing ( Amphenol Advanced Sensors )
Websitehttp://www.vishay.com/
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1N6291 Overview

1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-201AE

1.5KE6.8 THRU 1.5KE440CA
T
RANS
Z
ORB
™ TRANSIENT VOLTAGE SUPPRESSOR
Breakdown Voltage -
6.8 to 440 Volts
Case Style 1.5KE
Peak Pulse Power -
1500 Watts
FEATURES
1.0 (25.4)
MIN.
0.210 (5.3)
0.190 (4.8)
DIA.
0.375 (9.5)
0.285 (7.2)
1.0 (25.4)
MIN.
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
Glass passivated junction
1500W peak pulse power
capability on 10/1000µs waveform
repetition rate (duty cycle): 0.05%
Excellent clamping capability
Low incremental surge resistance
Fast response time: typically less
than 1.0ps from 0 Volts to V
(BR)
for uni-directional
and 5.0ns for bi-directional types
For devices with V
(BR)
>10V, I
D
are typically less
than 1.0µA
High temperature soldering guaranteed:
265°C/10 seconds, 0.375" (9.5mm) lead length,
5lbs. (2.3 kg) tension
Includes 1N6267 thru 1N6303
0.042 (1.07)
0.038 (0.96)
DIA.
MECHANICAL DATA
Case:
Molded plastic body over passivated junction
Terminals:
Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes positive end (cathode) except
for bi-directional
Mounting Position:
Any
Weight:
0.045 ounce, 1.2 grams
Dimensions in inches and (millimeters)
DEVICES FOR BI-DIRECTIONAL APPLICATIONS
For bidirectional use C or CA suffix for types 1.5KE6.8 thru types 1.5KE440A (e.g. 1.5KE6.8C, 1.5KE440CA).
Electrical characteristics apply in both directions.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOL
VALUE
UNITS
Peak pulse power dissipation with a 10/1000µs
waveform
(NOTE 1, Fig. 1)
Peak pulse current with a 10/1000µs waveform
(NOTE 1)
P
PPM
I
PPM
P
M(AV)
Minimum 1500
SEE TABLE 1
Watts
Amps
Watts
Steady state power dissipation at T
L
=75°C
lead lengths, 0.375" (9.5mm)
(NOTE 2)
Peak forward surge current, 8.3ms single half sine-wave
superimposed on rated load (JEDEC Method)
unidirectional only
(NOTE 3)
Maximum instantaneous forward voltage at 100A for
unidirectional only
(NOTE 4)
Operating junction and storage temperature range
6.5
I
FSM
200
Amps
V
F
T
J
, T
STG
3.5/5.0
-55 to +175
Volts
°C
NOTES:
(1) Non-repetitive current pulse, per Fig. 3 and derated above T
A
=25°C per Fig. 2
(2) Mounted on copper pad area of 1.6 x 1.6” (40 x 40mm) per Fig. 5
(3) Measured on 8.3ms single half sine-wave or equivalent square wave duty cycle=4 pulses per minute maximum
(4) V
F
=3.5V for devices of V
(BR)
≤220V
and V
F
=5.0 Volt max. for devices of V
(BR)
>220V
1/21/99

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Description 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-201AE 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
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