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CBR3A-P080

Description
bridge rectifiers, controlled avalanche
CategoryDiscrete semiconductor    diode   
File Size62KB,1 Pages
ManufacturerCentral Semiconductor
Download Datasheet Parametric Compare View All

CBR3A-P080 Overview

bridge rectifiers, controlled avalanche

CBR3A-P080 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerCentral Semiconductor
Reach Compliance Codeunknown
ECCN codeEAR99
Minimum breakdown voltage850 V
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1.1 V
JESD-30 codeS-PUFM-W4
JESD-609 codee0
Maximum non-repetitive peak forward current50 A
Number of components4
Phase1
Number of terminals4
Maximum output current3 A
Package body materialPLASTIC/EPOXY
Package shapeSQUARE
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage800 V
surface mountNO
technologyAVALANCHE
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Bridge Rectifiers, Controlled Avalanche*
Single Phase, Full Wave
1.5 to 35 Amperes
200 to 800 Volts
IO (AMPS)
@TA ( C)
@TC ( C)
IFSM (AMPS)
60
o
o
1.5
50
2.0
55
3.0
2.0 @ 25
3.0 @ 50
50
6.0
50
100
150
10
100
150
CASE
VRRM (VOLTS)
200
400
600
800
VF MAX @ IF
IR MAX @ VRRM
CASE A
CASE C
CASE CM
CBR1A-020
CBR1A-040
CBR1A-060
CBR1A-080
1.0V @ 1.0A
10µA
CBR2A-020
CBR2A-040
CBR2A-060
CBR2A-080
1.1V @ 2.0A
10µA
CBR3A-P020
CBR3A-P040
CBR3A-P060
CBR3A-P080
1.1V @ 1.5A
10µA
CBR6A-020
CBR6A-040
CBR6A-060
CBR6A-080
1.1V @ 3.0A
10µA
CBR10A-J020
CBR10A-J040
CBR10A-J060
CBR10A-J080
1.2V @ 5.0A
10µA
*AVALANCHE BREAKDOWN VOLTAGE
VRRM
200V
400V
600V
800V
MIN
250
450
650
850
175
w w w. c e n t r a l s e m i . c o m
MAX
700
900
1100
1300

CBR3A-P080 Related Products

CBR3A-P080 CBR3A-P020
Description bridge rectifiers, controlled avalanche bridge rectifiers, controlled avalanche
Is it lead-free? Contains lead Contains lead
Is it Rohs certified? incompatible incompatible
Maker Central Semiconductor Central Semiconductor
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Minimum breakdown voltage 850 V 250 V
Configuration BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
Diode component materials SILICON SILICON
Diode type BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF) 1.1 V 1.1 V
JESD-30 code S-PUFM-W4 S-PUFM-W4
JESD-609 code e0 e0
Maximum non-repetitive peak forward current 50 A 50 A
Number of components 4 4
Phase 1 1
Number of terminals 4 4
Maximum output current 3 A 3 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape SQUARE SQUARE
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Certification status Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 800 V 200 V
surface mount NO NO
technology AVALANCHE AVALANCHE
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form WIRE WIRE
Terminal location UPPER UPPER
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED

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