DSS2x81-0045B
Schottky Diode
High Performance Schottky Diode
Low Loss and Soft Recovery
Parallel legs
Part number
V
RRM
=
45 V
I
FAV
= 2x 80 A
V
F
= 0.63 V
DSS2x81-0045B
Backside: isolated
Features / Advantages:
●
Very low Vf
●
Extremely low switching losses
●
low Irm values
●
Improved thermal behaviour
●
High reliability circuit operation
●
Low voltage peaks for reduced
protection circuits
●
Low noise switching
Applications:
●
Rectifiers in switch mode power
supplies (SMPS)
●
Free wheeling diode in low voltage
converters
Package:
●
Housing: SOT-227B (minibloc)
●rIndustry
standard outline
●rCu
base plate internal DCB isolated
●rIsolation
Voltage 3000 V
●rEpoxy
meets UL 94V-0
●rRoHS
compliant
Ratings
Symbol
V
RRM
I
R
V
F
Definition
max. repetitive reverse voltage
reverse current
Conditions
V
R
=
V
R
=
I
F
=
I
F
=
45 V
45 V
80 A
80 A
d = 0.5
T
VJ
= 25 °C
T
VJ
= 25 °C
T
VJ
= 100 °C
T
VJ
= 25 °C
T
VJ
= 125 °C
T
C
= 85°C
T
VJ
= 150°C
min.
typ.
max.
45
60
250
0.65
0.96
0.63
0.96
80
0.30
4
0.80
Unit
V
mA
mA
V
V
V
V
A
V
m
Ω
K/W
°C
W
A
nF
forward voltage
I
F
= 160 A
I
F
= 160 A
I
FAV
V
F0
r
F
R
thJC
T
VJ
P
tot
I
FSM
C
J
average forward current
threshold voltage
slope resistance
rectangular
for power loss calculation only
thermal resistance junction to case
virtual junction temperature
total power dissipation
max. forward surge current
junction capacitance
-40
T
C
= 25 °C
t = 10 ms (50 Hz), sine
V
R
=
5 V; f = 1 MHz
T
VJ
= 45°C
T
VJ
= 25 °C
2.93
150
150
800
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per diode unless otherwise specified
20110603a
© 2011 IXYS all rights reserved
DSS2x81-0045B
Ratings
Symbol
I
RMS
R
thCH
T
stg
Weight
M
D
M
T
V
ISOL
d
Spp/App
d
Spb/Apb
mounting torque
terminal torque
isolation voltage
Definition
RMS current
thermal resistance case to heatsink
storage temperature
Conditions
per terminal
1)
min.
typ.
0.10
max.
100
Unit
A
K/W
°C
g
Nm
Nm
V
V
mm
mm
-40
30
1.1
1.1
t = 1 second
t = 1 minute
terminal to terminal
terminal to backside
150
1.5
1.5
3000
2500
10.5
8.6
3.2
6.8
creepage | striking distance on surface | through air
creepage | striking distance on surface | through air
Product Marking
Logo
YYWW Z
abcde
XXXXXX
Part No.
Assembly Code
DateCode
Assembly Line
Ordering
Standard
Part Name
DSS2x81-0045B
Marking on Product
DSS2x81-0045B
Delivering Mode
Tube
Base Qty Code Key
10
470422
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per diode unless otherwise specified
20110603a
© 2011 IXYS all rights reserved
DSS2x81-0045B
Outlines SOT-227B (minibloc)
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per diode unless otherwise specified
20110603a
© 2011 IXYS all rights reserved
DSS2x81-0045B
100
10000
10000
1000
T
VJ
=150°C
125°C
I
F
[A]
100
10
T
VJ
=
150°C
125°C
25°C
I
R
[mA]
10
C
T
100°C
75°C
1000
[pF]
1
50°C
25°C
T
VJ
= 25°C
1
0.0
0.1
0.2
0.4
0.6
0.8
0
10
20
30
40
50
100
0
10
20
30
40
V
F
[V]
Fig. 1 Maximum forward voltage
drop characteristics
V
R
[V]
Fig. 2 Typ. reverse current
I
R
vs. reverse voltage V
R
V
R
[V]
Fig. 3 Typ. junction capacitance
C
T
vs. reverse voltage V
R
120
100
80
70
60
80
I
F(AV)
60
50
DC
d = 0.5
P
(AV)
40
[A]
40
[W]
30
20
20
0
0
40
80
120
160
10
0
0
20
40
60
d=
DC
0.5
0.33
0.25
0.17
0.08
80
100
T
C
[°C]
Fig. 4 Average forward current
I
F(AV)
vs. case temp. T
C
I
F(AV)
[A]
Fig. 5 Forward power loss
characteristics
1
D=0.5
Z
thJC
[K/W]
0.33
0.25
0.17
Single Pulse
0.08
0.1
0.05
0.001
DSS2x81-0045B
Note: All curves are per diode
10
0.01
0.1
1
t
[s]
Fig. 6 Transient thermal impedance junction to case at various duty cycles
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per diode unless otherwise specified
20110603a
© 2011 IXYS all rights reserved
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