TSAL5300
Vishay Semiconductors
High Power Infrared Emitting Diode, RoHS Compliant, 940 nm,
GaAlAs/GaAs
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm):
∅
5
• Leads with stand-off
• Peak wavelength:
λ
p
= 940 nm
• High reliability
• High radiant power
• High radiant intensity
96 11505
• Angle of half intensity:
ϕ
= ± 22°
• Low forward voltage
• Suitable for high pulse current operation
DESCRIPTION
TSAL5300 is an infrared, 940 nm emitting diode in
GaAlAs/GaAs technology with high radiant power molded in
a blue-gray plastic package.
• Good spectral matching with Si photodetectors
• Lead (Pb)-free component in accordance
RoHS 2002/95/EC and WEEE 2002/96/EC
with
APPLICATIONS
• Infrared remote control units with high power requirements
• Free air transmission systems
• Infrared source for optical counters and card readers
PRODUCT SUMMARY
COMPONENT
I
e
(mW/sr)
ϕ
(deg)
± 22
λ
P
(nm)
940
t
r
(ns)
800
TSAL5300
45
Note
Test conditions see table “Basic Characteristics“
ORDERING INFORMATION
ORDERING CODE
TSAL5300
TSAL5300-MSZ
Note
MOQ: minimum order quantity
PACKAGING
Bulk
Tape and ammopack
REMARKS
MOQ: 4000 pcs, 4000 pcs/bulk
MOQ: 5000 pcs, 1000 pcs/ammopack
PACKAGE FORM
T-1¾
T-1¾
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
Thermal resistance junction/ambient
Note
T
amb
= 25 °C, unless otherwise specified
t
≤
5 s, 2 mm from case
J-STD-051, leads 7 mm soldered
on PCB
t
p
/T = 0.5, t
p
= 100 µs
t
p
= 100 µs
TEST CONDITION
SYMBOL
V
R
I
F
I
FM
I
FSM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
VALUE
5
100
200
1.5
160
100
- 40 to + 85
- 40 to + 100
260
230
UNIT
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
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94
For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81008
Rev. 1.9, 04-Sep-08
TSAL5300
High Power Infrared Emitting Diode, RoHS
Compliant, 940 nm, GaAlAs/GaAs
Vishay Semiconductors
180
120
100
80
P
V
- Power Dissipation (mW)
160
140
120
100
80
60
40
20
0
0
10
20 30
40
50
60
70
80
90
100
21212
I
F
- Forward Current (mA)
R
thJA
= 230 K/W
60
40
20
0
0
10
20 30 40
50 60 70
80
90 100
R
thJA
= 230 K/W
21211
T
amb
- Ambient Temperature (°C)
T
amb
- Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
BASIC CHARACTERISTICS
PARAMETER
Forward voltage
Temperature coefficient of V
F
Reverse current
Junction capacitance
Radiant intensity
Radiant power
Temperature coefficient of
φ
e
Angle of half intensity
Peak wavelength
Spectral bandwidth
Temperature coefficient of
λ
p
Rise time
Fall time
Virtual source diameter
Note
T
amb
= 25 °C, unless otherwise specified
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 1 A
I
F
= 100 mA
I
F
= 1 A
Method: 63 % encircled energy
TEST CONDITION
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1 A, t
p
= 100 µs
I
F
= 1 mA
V
R
= 5 V
V
R
= 0 V, f = 1 MHz, E = 0
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1 A, t
p
= 100 µs
I
F
= 100 mA, t
p
= 20 ms
I
F
= 20 mA
SYMBOL
V
F
V
F
TK
VF
I
R
C
j
I
e
I
e
φ
e
TKφ
e
ϕ
λ
p
Δλ
TKλ
p
t
r
t
r
t
f
t
f
d
30
260
25
45
350
35
- 0.6
± 22
940
50
0.2
800
500
800
500
2.3
150
MIN.
TYP.
1.35
2.6
- 1.8
10
MAX.
1.6
3
UNIT
V
V
mV/K
µA
pF
mW/sr
mW/sr
mW
%/K
deg
nm
nm
nm/K
ns
ns
ns
ns
mm
Document Number: 81008
Rev. 1.9, 04-Sep-08
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com
95
TSAL5300
Vishay Semiconductors
BASIC CHARACTERISTICS
T
amb
= 25 °C, unless otherwise specified
High Power Infrared Emitting Diode, RoHS
Compliant, 940 nm, GaAlAs/GaAs
10
1
I
F
- Forward Current (A)
Φ
e
- Radiant Power (mW)
1000
I
FSM
= 1 A (Single Pulse)
t
p
/T = 0.01
10
0
0.05
0.1
0.5
1.0
10
-1
10
-2
100
10
1
96 11987
10
-1
10
0
10
1
t
p
- Pulse Duration (ms)
10
2
13602
0.1
10
0
10
1
10
2
10
3
I
F
- Forward Current (mA)
10
4
Fig. 3 - Pulse Forward Current vs. Pulse Duration
Fig. 6 - Radiant Power vs. Forward Current
10
4
I
F
- Forward Current (mA)
1.6
10
3
I
e rel
;
Φ
e rel
1.2
I
F
= 20 mA
0.8
10
2
t
P
= 100
µs
t
P
/T = 0.001
10
1
0.4
10
0
0
13600
1
2
3
4
0
- 10 0 10
94 7993
50
100
140
V
F
- Forward
Voltage
(V)
T
amb
- Ambient Temperature (°C)
Fig. 4 - Forward Current vs. Forward Voltage
Fig. 7 - Relative Radiant Intensity/Power vs. Ambient Temperature
1000
I
e
- Radiant Intensity (mW/sr)
Φ
rel
- Relative Radiant Power
e
1.25
100
1.0
0.75
10
0.5
1
0.25
I
F
= 100 mA
0
890
940
990
0.1
10
0
14327
10
1
10
2
10
3
10
4
14291
I
F
- Forward Current (mA)
λ
-
Wavelength
(nm)
Fig. 5 - Radiant Intensity vs. Forward Current
Fig. 8 - Relative Radiant Power vs. Wavelength
www.vishay.com
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For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81008
Rev. 1.9, 04-Sep-08
TSAL5300
High Power Infrared Emitting Diode, RoHS
Compliant, 940 nm, GaAlAs/GaAs
Vishay Semiconductors
0°
10°
20°
30°
I
e rel
- Relative Radiant Intensity
40°
1.0
0.9
0.8
0.7
50°
60°
70°
80°
0.6
0.4
0.2
0
94
8883
Fig. 9 - Relative Radiant Intensity vs. Angular Displacement
PACKAGE DIMENSIONS
in millimeters
A
C
5.8
± 0.15
ϕ
- Angular Displacement
R 2.49 (sphere)
± 0.3
± 0.3
7.7
± 0.15
(3.6)
11.4
< 0.7
8.7
34.4
± 0.55
Area not plane
1.2
+ 0.2
- 0.1
Ø5
± 0.15
1.5
± 0.25
0.5
0.5
+ 0.15
- 0.05
+ 0.15
- 0.05
technical drawings
according to DIN
specifications
2.54 nom.
6.544-5258.05-4
Issue: 7; 08.11.99
96 12122
Document Number: 81008
Rev. 1.9, 04-Sep-08
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com
97
TSAL5300
Vishay Semiconductors
High Power Infrared Emitting Diode, RoHS
Compliant, 940 nm, GaAlAs/GaAs
TAPE DIMENSIONS TSAL5300
OPTION
CS21Z
FSZ
GSZ
MSZ
±1
H ± 0.5 mm
22
27
29
25.5
QUANTITY/BOX
1000
1000
1000
1000
±2
12.7
± 1
0.3
± 0.2
+1
- 0.5
± 0.3
18
12
9
± 0.5
“H”
0.9 max.
Ø4
2.54
+ 0.6
- 0.1
± 0.2
5.08
± 0.7
12.7
± 0.2
19314
6.35
± 0.7
Measure limit over 20 index-holes: ± 1
Fig. 10 -
∅
5 mm Devices on Tape
AMMOPACK
The tape is folded in a concertina arrangement and laid in
cardboard box.
If components are required with cathode before the anode
(figure 12), then start of tape should be taken from the side
of the box marked “-”. If components are required with anode
before cathode, then tape should be taken from the side of
the box marked “+”.
Label
Tape feed direction code 12
Diodes: cathode
before
anode
Transistors: collector
before
emitter
Tape feed direction code 21
Diodes: anode
before
cathode
Transistors: emitter
before
collector
C
A
B
94
8667
Fig. 11 - Tape Direction
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98
For technical questions, contact: emittertechsupport@vishay.com
Document Number: 81008
Rev. 1.9, 04-Sep-08
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