TPR 700
700 Watts, 50 Volts, Pulsed
Avionics 1030 - 1090 MHz
GENERAL DESCRIPTION
The TPR 700 is a high power COMMON BASE bipolar transistor. It is
designed for pulsed systems in the frequency band 1030-1090 MHz. The
device has gold thin-film metallization for proven highest MTTF. The
transistor includes input returns for
fast rise time.
Low thermal resistance
package reduces junction temperature, extends life.
CASE OUTLINE
55KT, Style 1
Common Base
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25
o
C
2
Maximum Voltage and Current
BVces
Collector to Base Voltage
BVebo Emitter to Base Voltage
Ic
Collector Current
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
2050 Watts
65 Volts
3.5 Volts
55 Amps
- 65 to + 200
o
C
+ 200
o
C
ELECTRICAL CHARACTERISTICS @ 25
O
C
SYMBOL
Pout
Pin
Pg
η
c
t
r
VSWR
BVebo
3
BVces
h
FE
CHARACTERISTICS
Power Out
Power Input
Power Gain
Collector Efficiency
Rise Time
Load Mismatch Tolerance
Emitter to Base Breakdown
Collector to Emitter Breakdown
DC - Current Gain
Thermal Resistance
TEST CONDITIONS
F = 1090 MHz
Vcc = 50 Volts
PW = 10
µsec
DF = 1%
F = 1090 MHz
Ie = 50mA
Ic = 100mA
Ic = 1000mA, Vce = 5 V
3.5
65
10
0.08
MIN
700
150
6.7
43
70
30:1
TYP
MAX
UNITS
Watts
Watts
dB
%
ns
Volts
Volts
o
θjc
2
C/W
Note 1: At rated output power and pulse conditions
2: At rated pulse conditions
3: Cannot measure due to input return
Issue February 1996
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
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