qSI-3000LUS
Series
SI-3000LUS Series
Surface-Mount, Low Current Consumption, Low Dropout Voltage Dropper Type
sFeatures
• Compact surface-mount package (SOT-89-3)
• Output current: 250 mA
• Low dropout voltage: V
DIF
≤
0.5 V (at I
O
= 250 mA)
• 4 types of output voltages (1.8 V, 2.5 V, 3.3 V, 5.0 V) available
• Built-in dropping type overcurrent, thermal protection circuits
sApplications
• Auxiliary power supply for PC
• Battery-driven electronic equipment
sAbsolute
Maximum Ratings
Parameter
DC Input Voltage
DC Output Current
Power Dissipation
Junction Temperature
Storage Temperature
Thermal Resistance (Junction to Ambient Air)
Symbol
V
IN
I
O
P
D*1
T
j*2
T
op*2
Ratings
18
250
0.75
–40 to +135
–40 to +125
146
Unit
V
mA
W
°C
°C
°C/W
(T
a
=25°C)
θ
j-a *1
*1: When mounted on glass-epoxy board 40
×
40 mm (copper laminate area 2%)
*2: Thermal protection circuits may operate if the junction temperature exceeds 135°C
sRecommended
Operating Conditions
Parameter
Input Voltage
DC Output Current
Ambient Operating Temperature
Symbol
min.
V
IN
I
O
T
op
*2
Ratings
max.
V
O
+2
*1
250
85
Unit
V
mA
°C
0
–20
*1: V
IN
(max) and I
O
(max) are restricted by the relationship P
D
= (V
IN
- V
O
)
×
I
O
.
Calculate these values referring to the reference data.
*2: Refer to the dropout voltage section.
qSI-3000LUS
Series
sElectrical
Characteristics
Ratings
Parameter
Symbol
V
O
Conditions
V
DIF
Dropout Voltage
Conditions
0.5
Conditions
Line Regulation
Load Regulation
Temperature Coeffi-
cient of Output Voltage
Ripple Rejection
Quiescent Circuit
Current
Overcurrent Protection
Starting Current
*1
∆V
LINE
Conditions
∆V
LOAD
Conditions
∆V
O
/∆T
a
Conditions
R
REJ
Conditions
I
q
Conditions
I
S1
Conditions
260
V
IN
=3.3V
55
V
IN
=3.3V, f=100 to 120H
Z
250
V
IN
=3.3V, I
O
=0mA
260
V
IN
=3.3V
55
V
IN
=3.3V, f=100 to 120H
Z
250
V
IN
=3.3V, I
O
=0mA
260
V
IN
=5V
±0.25
10
V
IN
=3.3 to 5V, I
O
=10mA
40
V
IN
=3.3V, I
O
=0 to 250mA
±0.25
T
j
=0 to 100°C
55
SI-3018LUS
min.
Output Voltage
1.764
typ.
1.800
(Under
development)
(T
a
=25°C, V
C
=2V unless otherwise specified)
(Under
development)
(Under
development)
SI-3025LUS
min.
2.450
typ.
2.500
SI-3033LUS
min.
3.234
typ.
3.300
max.
3.366
0.3
0.5
10
V
IN
=4.5 to 8V, I
O
=10mA
40
V
IN
=5V, I
O
=0 to 250mA
±0.3
SI-3050LUS
min.
4.900
typ.
5.000
Unit
max.
1.836
0.3
max.
2.550
0.3
max.
5.100
0.3
0.5
10
V
V
V
IN
=3.3V, I
O
=10mA
V
IN
=3.3V, I
O
=10mA
I
O
=100mA
0.5
I
O
=250mA
10
V
IN
=3.3 to 5V, I
O
=10mA
40
V
IN
=3.3V, I
O
=0 to 250mA
V
IN
=5V, I
O
=10mA
V
IN
=6V, I
O
=10mA
mV
mV
mV/°C
dB
V
IN
=6 to 10V, I
O
=10mA
40
V
IN
=6V, I
O
=0 to 250mA
±0.3
55
V
IN
=6V, f=100 to 120H
Z
250
V
IN
=6V, I
O
=0mA
260
V
IN
=6V
V
IN
=5V, f=100 to 120H
Z
250
V
IN
=5V, I
O
=0mA
µ
A
mA
*1: Is
1
is specified as the 5% drop point of output voltage V
O
on the condition that V
IN
=3.3 V (5 V for SI-3033LUS, 6 V for SI-3050LUS),
and I
O
=10 mA.
sExternal
Dimensions
4.5
(1.7)
(R
(0.4)
(Unit : mm)
1.6
)
0.3
(
φ
1
0.25
.0)
2.5
4.25max.
0.8min.
1
0.49max.
2
0.54
max.
3
(5
°
)
(5
°
45
°
)
0.49max.
0.4
(8
°)
(R
(8
°)
Pin Arrangement
q
V
IN
w
GND
e
V
OUT
1.5
15
(0.1)
0.
)
Plastic Mold Package Type
Flammability: UL94V-0
Weight: Approx. 0.05g
1.5
1.5
0.16
qSI-3000LUS
Series
sBlock
Diagram
V
IN
1
3
V
O
TSD
+
–
2
GND
REF
sStandard
External Circuit
V
IN
1
C
IN
3
V
O
C
O
: Output capacitor (10
µ
F or larger)
+
V
IN
GND
2
C
O
+
Load
The SI-3000LUS series can be operated on the circuit
even if a low ESR ceramic capacitor is used as the
output capacitor.
C
IN
:Input capacitor (0.1 to 10
µ
F)
This capacitor is required in the case of an inductive
input line or long wiring.
sReference
Data
Copper Laminate Area vs. Power Dissipation
T
j
=100°C PWB size 40
×
40
1
Ta=25°C
0.9
Ta=40°C
Ta=60°C
Ta=85°C
• A monolithic IC is mounted. The inner frame stage is con-
nected to the GND pin (pin 2). Therefore, enlarging the
copper laminate area leading to the GND pin achieves a
heat radiation effect.
• How to calculate the junction temperature
Measure the temperature (T
C
) of the GND pin (pin 2) lead
section using a thermistor, etc. Substitute this value in the
following formula and calculate the junction temperature.
T
j
=P
D
×θ
j–c+Tc (
θ
j–c=5
°
C/W)
100
1000
2
Power Dissipation P
D
(W)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
10
Copper Laminate Area (mm )
qSI-3000LUS
Series
sTypical
Characteristics of SI-3033LUS
(T
a
=25°C)
I
O
vs. V
DIF
Characteristics
0.6
Output Voltage Characteristics
5
Line Regulation
3.34
l
O
=0mA
0.5
3.32
Dropout Voltage V
DIF
(V)
Output Voltage V
O
(V)
0.4
l
O
=0mA
3
Output Voltage V
O
(V)
4
3.30
0.3
3.28
l
O
=250mA
3.26
2
l
O
=250mA
1
0.2
0.1
3.24
3.22
0
50
100
150
200
250
300
0
2
4
6
8
10
0
4
6
8
10
Output Current I
O
(mA)
Input Voltage V
IN
(V)
Input Voltage V
IN
(V)
Load Regulation
3.34
Overcurrent Protection Characteristics
5
3.32
Dropout Voltage V
DIF
(V)
3.30
8V
6V
3.26
5V
Output Voltage V
O
(V)
V
IN
=3.8V
4
3
V
IN
=3.8V
3.28
2
5V
3.24
1
8, 10V
3.22
0
50
100
150
200
250
300
0
0
100
200
300
400
Output Current I
O
(mA)
Output Current I
O
(mA)
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