TN2106
Low Threshold
N-Channel Enhancement-Mode
Vertical DMOS FETs
Ordering Information
BV
DSS
/
BV
DGS
60V
R
DS(ON)
(max)
2.5Ω
V
GS(th)
(max)
2.0V
Order Number / Package
TO-236AB*
TN2106K1
TO-92
TN2106N3
Die
TN2106ND
Product marking for SOT-23:
N1Lp
where
p
= 2-week alpha date code
*Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.
Features
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
ISS
and fast switching speeds
Excellent thermal stability
Integral Source-Drain diode
High input impedance and high gain
Complementary N- and P-channel devices
Advanced DMOS Technology
These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces devices with
the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
ent in MOS devices. Characteristic of all MOS structures, these
devices are free from thermal runaway and thermally-induced
secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.
Applications
Logic level interfaces – ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
Drain
Package Options
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature*
*
Distance of 1.6 mm from case for 10 seconds.
Note: See Package Outline section for dimensions.
BV
DSS
BV
DGS
±
20V
-55°C to +150°C
300°C
Gate
Source
S G D
TO-236AB
(SOT-23)
top view
TO-92
7-71
TN2106
Thermal Characteristics
Package
TO-236AB
TO-92
I
D
(continuous)*
0.28A
0.30A
I
D
(pulsed)
0.8A
1.0A
Power Dissipation
@ T
A
= 25
°
C
0.36W
0.74W
θ
jc
°
C/W
200
125
θ
ja
°
C/W
350
170
I
DR
*
0.28A
0.30A
I
DRM
0.8A
1.0A
*
I
D
(continuous) is limited by max rated T
j
.
Electrical Characteristics
(@ 25°C unless otherwise specified)
Symbol
BV
DSS
V
GS(th)
∆V
GS(th)
I
GSS
I
DSS
Parameter
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Change in V
GS(th)
with Temperature
Gate Body Leakage
Zero Gate Voltage Drain Current
Min
60
0.6
-3.8
0.1
2.0
-5.5
100
1
100
I
D(ON)
R
DS(ON)
∆R
DS(ON)
G
FS
C
ISS
C
OSS
C
RSS
t
d(ON)
t
r
t
d(OFF)
t
f
V
SD
t
rr
ON-State Drain Current
Static Drain-to-Source
ON-State Resistance
Change in R
DS(ON)
with Temperature
Forward Transconductance
Input Capacitance
Common Source Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage Drop
Reverse Recovery Time
150
0.70
400
35
17
7
3
5
6
5
1.2
400
50
25
8
5
8
9
8
1.8
V
ns
I
SD
= 0.5A, V
GS
= 0V
I
SD
= 0.5A, V
GS
= 0V
ns
V
DD
= 25V
I
D
= 0.5A
R
GEN
= 25Ω
pF
V
GS
= 0V, V
DS
= 25V, f = 1MHz
0.6
5.0
2.5
1.0
Typ
Max
Unit
V
V
mV/°C
nA
µA
µA
A
Ω
Ω
%/°C
m
Ω
Conditions
I
D
= 1mA, V
GS
= 0V
V
GS
= V
DS
, I
D
= 1mA
I
D
= 1mA, V
GS
= V
DS
V
GS
=
±20V,
V
DS
= 0V
V
GS
= 0V, V
DS
= Max Rating
V
GS
= 0V, V
DS
= 0.8 Max Rating
T
A
= 125°C
V
GS
= 10V, V
DS
= 25V
V
GS
= 4.5V, I
D
= 200mA
V
GS
= 10V, I
D
= 500mA
V
GS
= 10V, I
D
= 500mA
V
DS
= 25V, I
D
= 500mA
Notes:
1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
V
DD
10V
90%
INPUT
0V
10%
t
(ON)
t
d(ON)
V
DD
OUTPUT
0V
90%
90%
t
r
t
(OFF)
t
d(OFF)
t
F
D.U.T.
10%
10%
INPUT
PULSE
GENERATOR
R
gen
R
L
OUTPUT
7-72
TN2106
Typical Performance Curves
Output Characteristics
2.5
Saturation Characteristics
V
GS
=
10V
2.5
V
GS
=
10V
2.0
2.0
I
D
(amperes)
8V
I
D
(amperes)
1.5
1.5
8V
1.0
1.0
6V
0.5
6V
0.5
4V
3V
0
0
10
20
30
40
50
0
0
2
4
6
8
10
4V
3V
V
DS
(volts)
Transconductance vs. Drain Current
0.5
1.0
V
DS
(volts)
Power Dissipation vs. Temperature
0.4
V
DS
= 25V
0.8
TO-92
G
FS
(siemens)
25°C
0.2
P
D
(watts)
0.3
T
A
= -55°C
0.6
0.4
125°C
0.1
SOT-23
0.2
0
0
0.2
0.4
0.6
0.8
1.0
0
0
25
50
75
100
125
150
I
D
(amperes)
Maximum Rated Safe Operating Area
1.0
SOT-23 (pulsed)
1.0
T
A
(
°
C)
Thermal Response Characteristics
Thermal Resistance (normalized)
TO-236AB
0.8
TA = 25°C
PD = 0.36W
TO-92
TC = 25°C
PD = 1W
SOT-23 (DC)
I
D
(amperes)
0.1
0.6
0.4
0.01
T
A
= 25°C
0.2
0.001
0.1
1
10
100
0
0.001
0.01
0.1
1.0
10
V
DS
(volts)
t
p
(seconds)
7-73
TN2106
Typical Performance Curves
BV
DSS
Variation with Temperature
10
1.1
8
On-Resistance vs. Drain Current
V
GS
= 4.5V
BV
DSS
(normalized)
R
DS(ON)
(ohms)
6
V
GS
= 10V
1.0
4
2
0.9
0
-50
0
50
100
150
0
0.5
1.0
1.5
2.0
2.5
Tj (°C)
Transfer Characteristics
1.0
ID (amperes)
V
GS(th)
and R
DS(ON)
Variation with Temperature
2.0
V
DS
= 25V
0.8
1.2
R
DS(ON)
@ 10V, 0.5A
1.6
V
GS(th)
(normalized)
1.0
1.2
0.8
0.8
0.6
0.6
0.4
25°C
125°C
0.2
V
GS(th)
@ 1mA
0.4
0.4
0
0
2
4
6
8
10
-50
0
50
100
150
0
V
GS
(volts)
Capacitance vs. Drain-to-Source Voltage
100
10
Tj (°C)
Gate Drive Dynamic Characteristics
f = 1MHz
8
75
V
DS
= 10V
C (picofarads)
V
GS
(volts)
6
50
C
ISS
25
4
V
DS
= 20V
92 pF
C
OSS
C
RSS
2
38 pF
0
0
10
20
30
40
0
0
0.2
0.4
0.6
0.8
1.0
V
DS
(volts)
Q
G
(nanocoulombs)
7-74
R
DS(ON)
(normalized)
T
A
= -55°C
ID (amperes)
Real-time operating system RTOS
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