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P4KE20A

Description
400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-41
Categorysemiconductor    Discrete semiconductor   
File Size20KB,3 Pages
ManufacturerSSE
Websitehttp://www.sse-diode.com/
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P4KE20A Overview

400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-41

P4KE20A Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Maximum breakdown voltage21 V
Minimum breakdown voltage19 V
Processing package descriptionPLASTIC PACKAGE-2
stateDISCONTINUED
packaging shaperound
Package SizeLONG FORM
Terminal formWire
terminal coatingtin lead
Terminal locationAXIAL
Packaging MaterialsPlastic/Epoxy
CraftsmanshipZENER
structuresingle
Shell connectionisolation
Diode component materialssilicon
Maximum power consumption limit1 W
polarityunidirectional
Diode typeTRANS voltage SUPPRESSOR diode
shutdown voltage17.1 V
Maximum non-repetitive peak speed power400 W
SHANGHAI SUNRISE ELECTRONICS CO., LTD.
P4KE6.8 THRU P4KE440CA
TRANSIENT VOLTAGE SUPPRESSOR
BREAKDOWN VOLTAGE:6.8-440V
PEAK PULSE POWER: 400W
FEATURES
• 400W peak pulse power capability
• Excellent clamping capability
• Low incremental surge resistance
• Fast response time:
typically less than 1.0ps from 0V to V
BR
for unidirectional and 5.0nS for bidirectional types.
• High temperature soldering guaranteed:
265
o
C/10S/9.5mm lead length at 5 lbs tension
TECHNICAL
SPECIFICATION
DO - 41
MECHANICAL DATA
• Terminal: Plated axial leads solderable per
MIL-STD 202E, method 208C
• Case: Molded with UL-94 Class V-O recognized
flame retardant epoxy
• Polarity: Color band denotes cathode except for
unidirectional types.
• Mounting position: Any
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Ratings at 25
o
C ambient temperature unless otherwise specified)
RATINGS
Peak power dissipation
Peak pulse reverse current
Steady state power dissipation
Peak forward surge current
for unidirectional only
(Note 1)
(Note 1)
(Note 2)
(Note 3)
(Note 4)
SYMBOL
Pppm
Ippm
Pm(av)
I
FSM
V
F
VALUE
Minimum 400
See Table
1.0
40
3.5/6.5
UNITS
W
A
W
A
V
Maximum instantaneous forward voltage at 50A
o
T
STG
,T
J
Operating junction and storage temperature range
-55 to + 175
C
Notes:
1. 10/1000µS waveform non-repetitive current pulse, and derated above Ta=25
o
C
2. Tl=75
o
C, lead length 9.5mm, Mounted on copper pad area of (40×40mm)
3. Measured on 8.3ms single half sine-wave or equivalent square wave,duty cycle=4 pulses per minute maximum.
4. V
F
=3.5V max. for devices of V
(BR)
200V, and V
F
=5.0V max. for devices of V
(BR)
>200V
DEVICES FOR BIDIRECTIONAL APPLICATIONS
1. Suffix 'A' dnotes 5% tolerance device,no suffix 'A' dnotes 10% tolerance device.
2. For bidirectional use 'C' or 'CA' suffix for types P4KE7.5 thru types P4KE440A
(e.g. P4KE7.5C,P4KE440CA), for unidirectional don't use 'C' suffix after types.
3. For bidirectional devices having V
WM
of 10 volts and less, the I
D
limit is doubled.
4. Electrical characteristics apply in both directions.
http://www.sse-diode.com
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