Bulletin PD-20488 12/01
UFB120FA40
Insulated Ultrafast Rectifier Module
Features
•
•
•
•
•
•
•
•
•
•
Two Fully Independent Diodes
Ceramic Fully Insulated Package (V
ISOL
= 2500V AC)
Ultrafast Reverse Recovery
Ultrasoft Reverse Recovery Current Shape
Low Forward Voltage
Optimized for Power Conversion: Welding and Industrial SMPS Applications
Industry Standard Outline
Plug-in Compatible with other SOT-227 Packages
Easy to Assemble
Direct Mounting to Heatsink
t
rr
= 35ns
I
F(AV)
= 120A
@ T
C
= 65°C
V
R
= 400V
Description
The UFB120FA40 insulated modules integrate two state-of-the-art International Rectifier's Ultrafast recovery rectifiers
in the compact, industry standard SOT-227 package. The planar structure of the diodes, and the platinum doping life-
time control, provide a Ultrasoft recovery current shape, together with the best overall performance, ruggedness and
reliability characteristics.
These devices are thus intended for high frequency applications in which the switching energy is designed not to be
predominant portion of the total energy, such as in the output rectification stage of Welding machines, SMPS, DC-
DC converters. Their extremely optimized stored charge and low recovery current reduce both over dissipation in the
switching elements (and snubbers) and EMI/ RFI.
Absolute Maximum Ratings
Parameters
V
R
I
F
I
FSM
P
D
V
ISOL
T
J
, T
STG
Cathode-to-Anode Voltage
Continuous Forward Current, T
C
= 65°C
Single Pulse Forward Current, T
C
= 25°C
Max. Power Dissipation, T
C
@ 90°C
Operating Junction and Storage Temperatures
Per Diode
Per Diode
Per Module
Max
400
60
800
96
2500
- 55 to 150
Units
V
A
W
V
°C
RMS Isolation Voltage, Any Terminal to Case, t = 1 min
Case Styles
UFB120FA40
1
4
SOT-227
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2
3
1
UFB120FA40
Bulletin PD-20488 12/01
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified) per diode
Parameters
V
BR
V
FM
Cathode Anode
Breakdown Voltage
Forward Voltage
Min Typ Max Units Test Conditions
400
-
-
-
-
V
V
V
mA
mA
pF
I
R
= 100µA
I
F
= 60A
I
F
= 60A, T
J
= 150°C
V
R
= V
R
Rated
T
J
= 150°C, V
R
= V
R
Rated
V
R
= 400V
1.16 1.37
0.96 1.13
-
-
67
0.1
1
-
I
RM
Reverse Leakage Current
-
-
C
T
Junction Capacitance
-
Dynamic Recovery Characteristics @ T
J
= 25°C (unless otherwise specified) per diode
Parameters
t
rr
Reverse Recovery Time
Min Typ Max Units Test Conditions
-
-
-
30
65
128
7.4
17.8
240
1139
35
-
-
-
-
-
-
nC
A
ns
I
F
= 1.0A, di
F
/dt = 200A/µs, V
R
= 30V
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
I
F
= 50A
V
R
= 200V
di
F
/dt = 200A/µs
I
RRM
Peak Recovery Current
-
-
Q
rr
Reverse Recovery Charge
-
-
Thermal - Mechanical Characteristics
Parameters
R
thJC
R
thCS
Wt
T
Junction to Case
Single Diode Conducting
Both Diodes Conducting
Case to Heat Sink, Flat, Greased Surface
Weight
Mounting Torque
Min
-
-
-
-
-
Typ
0.99
0.49
0.05
30
1.3
Max
1.24
0.62
-
-
-
Units
°C/W
°C/W
g
(N*m)
2
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UFB120FA40
Bulletin PD-20488 12/01
1000
100
Tj = 150˚C
Reverse Current - I
R
(µA)
10
1
0.1
125˚C
25˚C
Instantaneous Forward Current - I
F
(A)
100
0.01
0.001
0
100
200
300
400
Reverse Voltage - V
R
(V)
Fig. 2 - Typical Values Of Reverse Current
Vs. Reverse Voltage
Tj = 150˚C
Junction Capacitance - C
T
(pF)
1000
Tj = 125˚C
10
Tj = 25˚C
100
Tj = 25˚C
1
0
0.5
1
1.5
2
Forward Voltage Drop - V
FM
(V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
(per diode)
10
Thermal Impedance Z
thJC
(°C/W)
10
1
10
100
1000
Reverse Voltage - V
R
(V)
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
1
Single Pulse
(Thermal Impedance)
P
DM
t1
0.1
Notes:
1. Duty factor D = t1/ t2
t2
2. Peak Tj = Pdm x ZthJC + Tc
0.01
0.0001
0.001
0.01
0.1
t
1
, Rectangular Pulse Duration (Seconds)
1
10
Fig. 4 - Max. Thermal Impedance Z
thJC
(per diode)
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3
UFB120FA40
Bulletin PD-20488 12/01
160
Allowable Case Temperature (°C)
Average Power Loss ( Watts )
70
RMS Limit
140
120
DC
60
50
DC
100
80
Square wave (D = 0.50)
60
80% Rated Vr applied
40
30
20
10
0
0
10
20
30
40
50
60
70
Average Forward Current - I
F(AV)
(A)
Fig. 6 - Forward Power Loss (per diode)
40
see note (3)
20
0
10
20
30
40
50
60
70
Average Forward Current - I
F(AV)
(A)
Fig. 5 - Max. Allowable Case Temperature
Vs. Average Forward Current (per diode)
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
160
150
140
130
120
110
100
90
80
70
60
50
100
1000
Tj = 25˚C
Qrr ( nC )
trr ( ns )
3050
If = 50A
Vrr = 200V
If = 50A
Vrr = 200V
2550
Tj = 125˚C
2050
Tj = 125˚C
1550
1050
Tj = 25˚C
550
di
F
/dt (A/µs )
50
100
di
F
/dt (A/µs )
1000
Fig. 7 - Typical Reverse Recovery time vs. di
F
/dt
Fig. 8 - Typical Stored Charge vs. di
F
/dt
(3)
Formula used: T
C
= T
J
- (Pd + Pd
REV
) x R
thJC
;
Pd = Forward Power Loss = I
F(AV)
x V
FM
@ (I
F(AV)
/
D) (see Fig. 6);
Pd
REV
= Inverse Power Loss = V
R1
x I
R
(1 - D); I
R
@ V
R1
= 80% rated V
R
4
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UFB120FA40
Bulletin PD-20488 12/01
3
I
F
t
rr
t
a
t
b
4
V
R
= 200V
0
2
Q
rr
I
RRM
0.01
Ω
L = 70µH
D.U.T.
dif/dt
ADJUST
D
G
IRFP250
S
1. di
F
/dt - Rate of change of current through
zero crossing
2. I
RRM
- Peak reverse recovery current
3. t
rr
- Reverse recovery time measured from
zero crossing point of negative going I
F
to
point where a line passing through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current
1
0.5 I
RRM
di(rec)M/dt
0.75 I
RRM
5
di
f
/dt
4. Q
rr
- Area under curve defined by
t
rr
and I
RRM
Q rr =
t rr x I
2
RRM
5. di
(rec) M
/ dt - Peak rate of change
of current during t
b
portion of t
rr
Fig. 1 - Reverse Recovery Parameter Test
Circuit
Fig. 2 - Reverse Recovery Waveform and
Definitions
SOT-227 Package Details
LEAD ASSIGNMENTS
FRED
Notes:
1. Dimensioning & tolerancing per ANSI Y14.5M-1982.
2. Controlling dimension: millimeter.
3. Dimensions are shown in millimeters (inches).
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