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EM6164K800WSA-70IF

Description
64kx16 LP sram
File Size232KB,12 Pages
ManufacturerEOREX
Websitehttp://www.eorex.com
Download Datasheet View All

EM6164K800WSA-70IF Overview

64kx16 LP sram

64Kx16 LP SRAM EM6164K600V Series
GENERAL DESCRIPTION
The EM6164K600V is a 1,048,576-bit low power CMOS static random access memory organized as
65,536 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology.
Its standby current is stable within the range of operating temperature.
The EM6164K600V is well designed for low power application, and particularly well suited for battery
back-up nonvolatile memory application.
The EM6164K600V operates from a single power supply of 2.7V ~ 3.6V and all inputs and outputs are
fully TTL compatible
FEATURES
Fast access time: 45/55/70ns
Low power consumption:
Operating current:
23/20/18mA (TYP.)
Standby current: -L/-LL version
10/1µA (TYP.)
Single 2.7V ~ 3.6V power supply
All inputs and outputs TTL compatible
Fully static operation
Tri-state output
Data byte control :
LB# (DQ0 ~ DQ7)
UB# (DQ8 ~ DQ15)
Data retention voltage: 1.5V (MIN.)
Package:
44-pin 400 mil TSOP-II
48-ball 6mm x 8mm TFBGA
FUNCTIONAL BLOCK DIAGRAM
Vcc
Vss
A0-A15
DECODER
64Kx16
MEMORY
ARRAY
DQ0-DQ7
Lower Byte
DQ8-DQ15
Upper Byte
CE#
WE#
OE#
LB#
UB#
I/O DATA
CURCUIT
COLUMN I/O
CONTROL
CIRCUIT
PIN DESCRIPTION
SYMBOL
A0 - A15
DQ0 – DQ15
CE#
WE#
OE#
LB#
UB#
Vcc
Vss
DESCRIPTION
Address Inputs
Data Inputs/Outputs
Chip Enable Input
Write Enable Input
Output Enable Input
Lower Byte Control
Upper Byte Control
Power Supply
Ground
1
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