TIC116 SERIES
SILICON CONTROLLED RECTIFIERS
Copyright © 2000, Power Innovations Limited, UK
APRIL 1971 - REVISED JUNE 2000
G
G
G
G
G
8 A Continuous On-State Current
80 A Surge-Current
Glass Passivated Wafer
400 V to 800 V Off-State Voltage
Max I
GT
of 20 mA
K
A
G
1
2
3
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDC1ACA
absolute maximum ratings over operating case temperature (unless otherwise noted)
RATING
TIC116D
Repetitive peak off-state voltage
TIC116M
TIC116S
TIC116N
TIC116D
Repetitive peak reverse voltage
TIC116M
TIC116S
TIC116N
Continuous on-state current at (or below) 70°C case temperature (see Note 1)
Average on-state current (180° conduction angle) at (or below) 70°C case temperature
(see Note 2)
Surge on-state current at (or below) 25°C case temperature (see Note 3)
Peak positive gate current (pulse width
≤
300
µs)
Peak gate power dissipation (pulse width
≤
300
µs)
Average gate power dissipation (see Note 4)
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from case for 10 seconds
I
T(RMS)
I
T(AV)
I
TM
I
GM
P
GM
P
G(AV)
T
C
T
stg
T
L
V
RRM
V
DRM
SYMBOL
VALUE
400
600
700
800
400
600
700
800
8
5
80
3
5
1
-40 to +110
-40 to +125
230
A
A
A
A
W
W
°C
°C
°C
V
V
UNIT
NOTES: 1. These values apply for continuous dc operation with resistive load. Above 70°C derate linearly to zero at 110°C.
2. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with resistive load. Above 70°C derate
linearly to zero at 110°C.
3. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated value of peak reverse voltage
and on-state current. Surge may be repeated after the device has returned to original thermal equilibrium.
4. This value applies for a maximum averaging time of 20 ms.
PRODUCT
INFORMATION
1
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
TIC116 SERIES
SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED JUNE 2000
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
I
DRM
I
RRM
I
GT
Repetitive peak
off-state current
Repetitive peak
reverse current
Gate trigger current
V
D
= rated V
DRM
V
R
= rated V
RRM
V
AA
= 12 V
V
AA
= 12 V
t
p(g)
≥
20 µs
V
GT
Gate trigger voltage
V
AA
= 12 V
t
p(g)
≥
20 µs
V
AA
= 12 V
t
p(g)
≥
20 µs
V
AA
= 12 V
I
H
Holding current
Initiating I
T
= 100 mA
V
AA
= 12 V
Initiating I
T
= 100 mA
V
T
dv/dt
NOTE
On-state
voltage
Critical rate of rise of
off-state voltage
I
T
= 8 A
V
D
= rated V
D
(see Note 5)
I
G
= 0
T
C
= 110°C
400
T
C
= - 40°C
R
L
= 100
Ω
T
C
= 110°C
0.2
100
mA
40
1.7
V
V/µs
R
L
= 100
Ω
0.8
I
G
= 0
R
L
= 100
Ω
R
L
= 100
Ω
TEST CONDITIONS
T
C
= 110°C
T
C
= 110°C
t
p(g)
≥
20
µs
T
C
= - 40°C
8
MIN
TYP
MAX
2
2
20
2.5
1.5
V
UNIT
mA
mA
mA
5: This parameter must be measured using pulse techniques, t
p
= 300 µs, duty cycle
≤
2 %. Voltage sensing-contacts, separate from
the current carrying contacts, are located within 3.2 mm from the device body.
thermal characteristics
PARAMETER
R
θ
JC
R
θ
JA
Junction to case thermal resistance
Junction to free air thermal resistance
MIN
TYP
MAX
3
62.5
UNIT
°C/W
°C/W
PRODUCT
2
INFORMATION
TIC116 SERIES
SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED JUNE 2000
THERMAL INFORMATION
AVERAGE ON-STATE CURRENT
DERATING CURVE
P
A
- Max Continuous Anode Power Dissipated- W
16
I
T(AV)
- Maximum Average On-State Current - A
14
12
0°
10
Continuous DC
8
6
4
2
0
30
Φ
= 180°
180°
Φ
Conduction
Angle
TI03AA
MAX ANODE POWER LOSS
vs
ON-STATE CURRENT
100
T
J
= 110°C
TI03AB
10
1
40
50
60
70
80
90
100
110
0·1
0·1
1
10
100
T
C
- Case Temperature - °C
I
T
- Continuous On-State Current - A
Figure 1.
SURGE ON-STATE CURRENT
vs
CYCLES OF CURRENT DURATION
100
I
TM
- Peak Half-Sine-Wave Current - A
TI03AC
Figure 2.
TRANSIENT THERMAL RESISTANCE
vs
CYCLES OF CURRENT DURATION
10
R
θ
JC(t)
- Transient Thermal Resistance - °C/W
TI03AD
10
1
T
C
≤
70°C
No Prior Device Conduction
Gate Control Guaranteed
1
1
10
Consecutive 50 Hz Half-Sine-Wave Cycles
100
0·1
1
10
Consecutive 50 Hz Half-Sine-Wave Cycles
100
Figure 3.
Figure 4.
PRODUCT
INFORMATION
3
TIC116 SERIES
SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED JUNE 2000
TYPICAL CHARACTERISTICS
GATE TRIGGER CURRENT
vs
CASE TEMPERATURE
TC03AA
GATE TRIGGER VOLTAGE
vs
CASE TEMPERATURE
1
TC03AB
V
AA
=12 V
I
GT
- Gate Trigger Current - mA
t
p(g)
≥
20 µs
10
V
GT
- Gate Trigger Voltage - V
R
L
= 100
Ω
0·8
0·6
0·4
V
AA
=12 V
0·2
R
L
= 100
Ω
t
p(g)
≥
20 µs
1
-50
-25
0
25
50
75
100
125
0
-50
-25
0
25
50
75
100
125
T
C
- Case Temperature - °C
T
C
- Case Temperature - °C
Figure 5.
HOLDING CURRENT
vs
CASE TEMPERATURE
100
TC03AD
Figure 6.
PEAK ON-STATE VOLTAGE
vs
PEAK ON-STATE CURRENT
2·5
T
C
= 25 °C
t
P
= 300 µs
2
Duty Cycle
≤
2 %
TC03AE
V
TM
- Peak On-State Voltage - V
125
V
AA
= 12 V
Initiating I
T
= 100 mA
I
H
- Holding Current - mA
1·5
10
1
0·5
1
-50
-25
0
25
50
75
100
0
0·1
1
10
100
T
C
- Case Temperature - °C
I
TM
- Peak On-State Current - A
Figure 7.
Figure 8.
PRODUCT
4
INFORMATION
TIC116 SERIES
SILICON CONTROLLED RECTIFIERS
APRIL 1971 - REVISED JUNE 2000
MECHANICAL DATA
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
TO-220
4,70
4,20
ø
3,96
3,71
10,4
10,0
2,95
2,54
6,6
6,0
15,32
14,55
1,32
1,23
18,0 TYP.
6,1
5,6
0,97
0,66
1
2
3
1,47
1,07
14,1
12,7
2,74
2,34
5,28
4,68
2,90
2,40
0,64
0,41
ALL LINEAR DIMENSIONS IN MILLIMETERS
NOTE
A: The centre pin is in electrical contact with the mounting tab.
PRODUCT
INFORMATION
5
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