DTB133HK / DTB133HS
Transistors
Digital transistors (built-in resistors)
DTB133HK / DTB133HS
!
Features
1) Built-in bias resistors enable the configuration of an inverter
circuit without connecting external input resistors.
2) The bias resistors consist of thin-film resistors with complete
isolation to allow positive biasing of the input, and parasitic
effects are almost completely eliminated.
3) Only the on/off conditions need to be set for operation, making
device design easy.
4) Higher mounting densities can be achieved.
!
External dimensions
(Units : mm)
DTB133HK
(1)
0.4
(3)
1.6
2.8
0.15
0.3to0.6
0to0.1
Each lead has same dimensions
ROHM : SMT3
EIAJ : SC-59
(1) Emitter(Source)
(2) Base(Gate)
(3) Collector(Drain)
!
Absolute maximum ratings
(Ta = 25°C)
Parameter
Supply voltage
Input voltage
Output current
DTB133HK
Power
dissipation DTB133HS
Junction temperature
Storage temperature
Symbol
V
CC
V
I
I
C
Pd
Tj
Tstg
Limits
−50
−20
6
−500
200
300
150
−55~150
Unit
V
V
mA
mW
°C
°C
(15Min.)
3
DTB133HS
4
2
3Min.
0.45
2.5
5
(1) (2) (3)
0.5 0.45
0.8
ROHM : SPT
EIAJ : SC-72
(1) Emitter
(2) Collector
(3) Base
!
Package, marking, and packaging specifications
Part No.
Package
Marking
Packaging code
Basic ordering unit (pieces)
DTB133HK
SMT3
G98
T146
3000
DTB133HS
SPT
-
TP
5000
!
Circuit schematic
IN
R
1
R
2
OUT
GND (+)
IN
GND (+)
OUT
!
Electrical characteristics
(Ta = 25°C)
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Symbol
V
I(off)
V
I(on)
V
O(on)
I
I
I
O(off)
G
I
R
1
R
2
/R
1
f
T
Min.
-
−2
-
-
-
56
2.31
2.4
-
Typ.
-
-
−0.1
-
-
-
3.3
3
200
Max.
−0.3
-
−0.3
−2.4
−0.5
-
4.29
3.7
-
Unit
V
V
mA
µA
-
kΩ
-
MHz
Conditions
V
CC
=
−5V
, I
O
=
−100µA
V
O
=
−0.3V
, I
O
=
−20mA
I
O
=
−50mA
, I
I
=
−2.5mA
V
I
=
−5V
V
CC
=
−50V
, V
I
= 0V
I
O
=
−50mA
, V
O
=
−5V
-
-
V
CE
=
−10V
, I
E
= 5mA , f = 100MHz
1.1
0.95 0.95
1.9
2.9
(2)
Taping specifications
Transition frequency
∗
Transition frequency of the device.
∗
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