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LSK389-C-71

Description
ultra low noise monolithic dual N-channel jfet
CategoryDiscrete semiconductor    The transistor   
File Size111KB,2 Pages
ManufacturerLinear ( ADI )
Websitehttp://www.analog.com/cn/index.html
Environmental Compliance
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LSK389-C-71 Overview

ultra low noise monolithic dual N-channel jfet

LSK389-C-71 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Parts packaging codeTO-71
package instructionCYLINDRICAL, O-MBCY-W6
Contacts6
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSEPARATE, 2 ELEMENTS
Minimum drain-source breakdown voltage40 V
FET technologyJUNCTION
JEDEC-95 codeTO-71
JESD-30 codeO-MBCY-W6
Number of components2
Number of terminals6
Operating modeDEPLETION MODE
Maximum operating temperature135 °C
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Base Number Matches1
LSK389
Linear Integrated Systems
FEATURES
ULTRA LOW NOISE
TIGHT MATCHING
HIGH BREAKDOWN VOLTAGE
HIGH GAIN
LOW CAPACITANCE
ABSOLUTE MAXIMUM RATINGS
1
@ 25 °C (unless otherwise stated)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
Maximum Power Dissipation
Continuous Power Dissipation @ +125 °C
Maximum Currents
Gate Forward Current
Maximum Voltages
Gate to Source
Gate to Drain
-65 to +150 °C
-55 to +135 °C
400mW
I
G(F)
= 10mA
V
GSS
= 40V
V
GDS
= 40V
ULTRA LOW NOISE
MONOLITHIC DUAL
N-CHANNEL JFET
e
n
= 0.9nV/√Hz (typ)
|V
GS1-2
| = 20mV max
BV
GSS
= 40V max
Y
fs
= 20mS (typ)
25pF typ
TO-71
BOTTOM VIEW
SOIC-A
S1
1
2
3
4
8
7
6
5
IMPROVED SECOND SOURCE REPLACEMENT FOR 2SK389
G1
D1
S1
2
1
7
3
5
6
G2
SS
D2
S2
S2
D2
G2
D1
SS
G1
*For equivalent single version, see LSK170 family.
MATCHING CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL
V
GS1
V
GS2
I
DSS1
I
DSS2
CHARACTERISTIC
Differential Gate to Source Cutoff
Voltage
MIN
TYP
MAX
UNIT
CONDITIONS
20
0.9
mV
-
V
DS
= 10V, I
D
= 1mA
V
DS
= 10V, V
GS
= 0V
Gate to Source Saturation Current Ratio
ELECTRICAL CHARACTERISTICS @ 25 °C (unless otherwise stated)
SYMBOL
CHARACTERISTIC
MIN
TYP
MAX UNITS
CONDITIONS
BV
GSS
V
GS(OFF)
I
DSS
I
GSS
Gate to Source Breakdown Voltage
Gate to Source Pinch-off Voltage
Drain to Source Saturation
Current
LSK389A
LSK389B
LSK389C
40
0.15
2.6
6
10
2
6.5
12
20
200
V
V
mA
pA
V
DS
= 0, I
D
= 100µA
V
DS
= 10V, I
D
= 0.1µA
V
DS
= 10V, V
GS
= 0
V
GS
= -30V, V
DS
= 0
Gate to Source Leakage Current
Linear Integrated Systems
• 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 490-9160 • Fax: 510 353-0261

LSK389-C-71 Related Products

LSK389-C-71 LSK389-C-SOIC-8 LSK389-B-SOIC-8 LSK389-A-71 LSK389-A-SOIC-8
Description ultra low noise monolithic dual N-channel jfet ULTRA LOW NOISE MONOLITHIC DUAL N-CHANNEL JFET ultra low noise monolithic dual N-channel jfet ultra low noise monolithic dual N-channel jfet ultra low noise monolithic dual N-channel jfet

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