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TISP2180L

Description
dual symmetrical transient voltage suppressors
CategoryWireless rf/communication    Telecom circuit   
File Size125KB,6 Pages
ManufacturerPower Innovations Limited
Websitehttp://www.power-innovations.com
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TISP2180L Overview

dual symmetrical transient voltage suppressors

TISP2180L Parametric

Parameter NameAttribute value
MakerPower Innovations Limited
package instructionSIP,
Reach Compliance Codeunknown
JESD-30 codeR-PSIP-T3
length7.6 mm
Number of functions1
Number of terminals3
Maximum operating temperature70 °C
Minimum operating temperature
Package body materialPLASTIC/EPOXY
encapsulated codeSIP
Package shapeRECTANGULAR
Package formIN-LINE
Certification statusNot Qualified
Maximum seat height13.34 mm
surface mountNO
Telecom integrated circuit typesSURGE PROTECTION CIRCUIT
Temperature levelCOMMERCIAL
Terminal formTHROUGH-HOLE
Terminal pitch2.2 mm
Terminal locationSINGLE
width2.55 mm
TISP2180L
DUAL SYMMETRICAL TRANSIENT
VOLTAGE SUPPRESSORS
Copyright © 1997, Power Innovations Limited, UK
FEBRUARY 1990 - REVISED SEPTEMBER 1997
TELECOMMUNICATION SYSTEM SECONDARY PROTECTION
q
Ion-Implanted Breakdown Region
Precise and Stable Voltage
Low Voltage Overshoot under Surge
DEVICE
‘2180L
V
(Z)
V
145
V
(BO)
V
180
q
Planar Passivated Junctions
Low Off-State Current < 10 µA
Rated for International Surge Wave Shapes
WAVE SHAPE
8/20 µs
10/160 µs
10/560 µs
0.2/310 µs
10/700 µs
10/1000 µs
STANDARD
ANSI C62.41
FCC Part 68
FCC Part 68
RLM 88
FTZ R12
VDE 0433
CCITT IX K17/K20
REA PE-60
I
TSP
A
150
60
45
38
50
50
50
50
q
device symbol
q
UL Recognized, E132482
description
The TISP2180L is designed specifically for
telephone equipment protection against lightning
and transients induced by a.c. power lines.
These devices will supress voltage transients
between terminals A and C, B and C, and A and
B.
Transients are initially clipped by zener action
until the voltage rises to the breakover level,
which causes the device to crowbar. The high
crowbar holding current prevents d.c. latchup as
the transient subsides.
These monolithic protection devices are
fabricated in ion-implanted planar structures to
ensure precise and matched breakover control
and are virtually transparent to the system in
normal operation.
PRODUCT
INFORMATION
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
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