RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
TVS
P4FMAJ
SERIES
GPP TRANSIENT VOLTAGE SUPPRESSOR
400 WATT PEAK POWER 1.0 WATT STEADY STATE
FEATURES
*
*
*
*
*
*
Plastic package has underwriters laboratory
Glass passivated chip construction
400 watt surage capability at 1ms
Excellent clamping capability
Low zener impedance
Fast response time
DO-214AC
Ratings at 25
o
C ambient temperature unless otherwise specified.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Dimensions in inches and (millimeters)
DEVICES FOR BIPOLAR APPLICATIONS
For Bidirectional use C or CA suffix for types P4FMAJ6.8 thru P4FMAJ400
Electrical characteristics apply in both direction
MAXIMUM RATINGS
(At T
A
= 25 C unless otherwise noted)
RATINGS
Peak Power Dissipation at T
A
= 25 C, T
P
= 1mS ( Note 1 )
Peak Pulse Current with a 10/1000uS waveform
( Note 1, Fig.3 )
Steady State Power Dissipation at T
L
= 75 C ( Note 2 )
Peak Forward Surge Current, 8.3mS single half sine wave-
superimposed on rated load ( JEDEC METHOD ) ( Note 3 )
Maximum Instantaneous Forward Voltage at 25A for
unidirectional only ( Note 4 )
Operating and Storage Temperature Range
o
o
o
SYMBOL
P
PPM
I
PPM
P
M
(
AV
)
I
FSM
V
F
T
J
, T
STG
VALUE
Minimum 400
SEE TABLE 1
1.0
40
3.5/6.5
-65 to + 175
UNITS
Watts
Amps
Watts
Amps
Volts
0
C
1998-8
NOTES : 1. Non-repetitive current pulse, per Fig.3 and derated above T
A
= 25
o
C per Fig.2.
2. Mounted on 0.2 X 0.2” (5.0 X 5.0mm) copper pad to each terminal.
3. Measured on 8.3mS single half Sine-Wave or equivalent wave, duty cycle = 4 pulses per minute maximum.
4. V
F
= 3.0V max. for devices of V(
BR
) < 200V and V
F
= 5.0V max. for devices of V(
BR
) > 200V.
TI Technology Forum
京公网安备 11010802033920号
EEWORLD
