IS63LV1024-12JI datasheet, PDF

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IS63LV1024-12JI: Description128k x 8 high-speed cmos static ram 3.3V revolutionary pinout; Categorystorage storage; File Size68KB，8 Pages; ManufacturerIntegrated Silicon Solution ( ISSI )

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IS63LV1024-12JI Overview

128k x 8 high-speed cmos static ram 3.3V revolutionary pinout

IS63LV1024-12JI Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Integrated Silicon Solution ( ISSI )
Parts packaging code	SOJ
package instruction	0.300 INCH, PLASTIC, SOJ-32
Contacts	32
Reach Compliance Code	compliant
ECCN code	3A991.B.2.B
Is Samacsys	N
Maximum access time	12 ns
I/O type	COMMON
JESD-30 code	R-PDSO-J32
JESD-609 code	e0
length	20.955 mm
memory density	1048576 bit
Memory IC Type	STANDARD SRAM
memory width	8
Humidity sensitivity level	3
Number of functions	1
Number of ports	1
Number of terminals	32
word count	131072 words
character code	128000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	128KX8
Output characteristics	3-STATE
Exportable	YES
Package body material	PLASTIC/EPOXY
encapsulated code	SOJ
Encapsulate equivalent code	SOJ32,.34
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	3.3 V
Certification status	Not Qualified
Maximum seat height	3.556 mm
Maximum standby current	0.01 A
Minimum standby current	3.15 V
Maximum slew rate	0.14 mA
Maximum supply voltage (Vsup)	3.45 V
Minimum supply voltage (Vsup)	3.15 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	J BEND
Terminal pitch	1.27 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	7.62 mm
Base Number Matches	1

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IS63LV1024

128K x 8 HIGH-SPEED CMOS STATIC RAM

3.3V REVOLUTIONARY PINOUT

FEATURES

• High-speed access times:

8, 10, 12 and 15 ns

• High-performance, low-power CMOS process

• Multiple center power and ground pins for

greater noise immunity

• Easy memory expansion with

and

options

•

power-down

• Fully static operation: no clock or refresh

required

• TTL compatible inputs and outputs

• Single 3.3V power supply

• Packages available:

– 32-pin 300-mil SOJ

– 32-pin 400-mil SOJ

– 32-pin TSOP (Type II)

ISSI

DESCRIPTION

SEPTEMBER 2000

The

ISSI

IS63LV1024 is a very high-speed, low power,

131,072-word by 8-bit CMOS static RAM in revolutionary

pinout. The IS63LV1024 is fabricated using

ISSI

high-performance CMOS technology. This highly reliable

process coupled with innovative circuit design

techniques, yields higher performance and low power

consumption devices.

When

is HIGH (deselected), the device assumes a

standby mode at which the power dissipation can be

reduced down to 250 µW (typical) with CMOS input levels.

The IS63LV1024 operates from a single 3.3V power

supply and all inputs are TTL-compatible.

FUNCTIONAL BLOCK DIAGRAM

A0-A16

DECODER

128K X 8

MEMORY ARRAY

VCC

GND

I/O

DATA

CIRCUIT

I/O0-I/O7

COLUMN I/O

CONTROL

CIRCUIT

ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. H

10/02/00

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