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1N5818

Description
1.0A schottky barrier rectifier
CategoryDiscrete semiconductor    diode   
File Size43KB,4 Pages
ManufacturerWon-Top Electronics Co., Ltd.
Websitehttps://www.wontop.com/
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1N5818 Overview

1.0A schottky barrier rectifier

1N5818 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerWon-Top Electronics Co., Ltd.
Parts packaging codeDO-41
package instructionPLASTIC PACKAGE-2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresFREE WHEELING DIODE, LOW POWER LOSS
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.55 V
JEDEC-95 codeDO-41
JESD-30 codeO-PALF-W2
JESD-609 codee0
Maximum non-repetitive peak forward current25 A
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage30 V
surface mountNO
technologySCHOTTKY
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationAXIAL
WTE
POWER SEMICONDUCTORS
1N5817 – 1N5819
Pb
1.0A SCHOTTKY BARRIER DIODE
Features
!
!
Schottky Barrier Chip
Guard Ring Die Construction for
Transient Protection
!
High Current Capability
A
B
!
Low Power Loss, High Efficiency
!
High Surge Current Capability
!
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications

D
A
C
Mechanical Data
!
!
!
!
!
!
!
Case: DO-41, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 0.34 grams (approx.)
Mounting Position: Any
Marking: Type Number
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
DO-41
Dim
Min
Max
25.4
A
4.06
5.21
B
0.71
0.864
C
2.00
2.72
D
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current (Note 1)
@T
L
= 90°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
@T
A
=25°C unless otherwise specified
1N5817
20
14
1N5818
30
21
1.0
25
1N5819
40
28
Unit
V
V
A
A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single half sine-wave superimposed on rated load
(JEDEC Method)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Lead (Note 1)
Operating and Storage Temperature Range
@I
F
= 1.0A
@I
F
= 3.0A
@T
A
= 25°C
@T
A
= 100°C
V
FM
I
RM
C
j
R
JL
T
j
, T
STG
0.450
0.750
0.550
0.875
1.0
10
110
15
-65 to +150
0.60
0.90
V
mA
pF
°C/W
°C
Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
1N5817 – 1N5819
1 of 4
© 2006 Won-Top Electronics

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Index Files: 1140  2236  1117  1708  1474  23  46  35  30  58 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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