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P4C147-12DC

Description
ULTRA HIGH SPEED 4K x 1 STATIC CMOS RAM
File Size59KB,6 Pages
ManufacturerETC
Download Datasheet View All

P4C147-12DC Overview

ULTRA HIGH SPEED 4K x 1 STATIC CMOS RAM

P4C147
P4C147
ULTRA HIGH SPEED 4K x 1
STATIC CMOS RAM
FEATURES
Full CMOS, 6T Cell
High Speed (Equal Access and Cycle Times)
– 10/12/15/20/25 ns (Commercial)
– 15/20/25/35 ns (Military)
Low Power Operation
– 715 mW Active
–10 (Commercial)
– 550 mW Active
–25 (Commercial)
– 110 mW Standby (TTL Input)
– 55 mW Standby (CMOS Input)
Single 5V
±
10% Power Supply
Separate Input and Output Ports
Three-State Outputs
Fully TTL Compatible Inputs and Outputs
Standard Pinout (JEDEC Approved)
– 18 Pin 300 mil DIP
– 18 Pin CERPACK
– 18 Pin LCC (290 x 430 mils)
DESCRIPTION
The P4C147 is a 4,096-bit ultra high speed static RAM
organized as 4K x 1. The CMOS memories require no
clocks or refreshing, and have equal access and cycle
times. Inputs are fully TTL-compatible. The RAM operates
from a single 5V
±
10% tolerance power supply.
Access times as fast as 10 nanoseconds are available,
permitting greatly enhanced system operating speeds.
CMOS is utilized to reduce power consumption in both
active and standby modes. In addition to very high
performance, this device features latch-up protection and
single-event-upset protection.
The P4C147 is available in 18 pin 300 mil DIP packages
as well as an 18-pin CERPACK package and LCC.
FUNCTIONAL BLOCK DIAGRAM
A
ROW
SELECT
4,096-BIT
MEMORY
ARRAY
PIN CONFIGURATIONS
A0
VCC
A11
17
18
16
15
14
13
12
A0
A1
A2
A3
A4
A5
DOUT
WE
GND
1
2
3
4
5
6
7
8
9
18
17
16
15
14
13
12
11
10
V CC
A 11
A 10
A9
A8
A7
A6
DIN
CE
2
A1
(6)
A
A2
A3
A4
A5
DOUT
8
3
4
5
6
1
A10
A9
A8
A7
A6
11
D
IN
INPUT
DATA
CONTROL
COLUMN I/O
D
OUT
7
9
GND
WE
COLUMN
SELECT
10
CE
A
(6)
A
DIP (P1, D1), CERPACK (F1) SIMILAR
LCC (L7)
TOP VIEW
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