Formosa MS
MBR0520-N THRU MBR0560-N
Chip Schottky Barrier Diodes
Silicon epitaxial planer type
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy M
olding Compound.
For surface mounted applications.
Exceeds environmental standards of MIL-S-19500 /
228
Low leakage current.
0.044 (1.1)
0.035 (0.9)
SOD-323
0.106 (2.7)
0.090 (2.3)
0.012(0.3) Typ.
0.053 (1.35)
0.045 (1.15)
0.035(0.9) Typ.
0.035(0.9) Typ.
Mechanical data
Case : Molded plastic, JEDEC SOD-323
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by c athode band
Mounting P
osition : Any
Weight : 0.04 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
(AT T
A
=25
o
C unless otherwise noted)
PARAMETER
Forward rectified current
Forward surge current
See Fig.1
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
V
R
= V
RRM
T
A
=
25
o
C
o
CONDITIONS
Symbol
I
O
I
FSM
MIN.
TYP.
MAX.
0.5
15
0.5
10
UNIT
A
A
mA
mA
o
Reverse current
Thermal resistance
Diode junction capacitance
Storage temperature
I
R
Rq
JC
C
J
T
STG
-55
90
120
V
R
= V
RRM
T
A
= 125 C
Junction to ambient
f=1MHz and applied 4vDC reverse voltage
C / w
pF
+150
o
C
SYMBOLS
MARKING
CODE
A
B
C
D
E
V
RRM
*1
V
RMS
*2
V
R
*3
V
F
*4
Operating
temperature
(
o
C)
(V)
MBR0520-N
MBR0530-N
MBR0540-N
MBR0550-N
MBR0560-N
20
30
40
50
60
(V)
14
21
28
35
42
(V)
20
30
40
50
60
(V)
0.40
0.45
-55 to +125
*1 Repetitive peak reverse voltage
*2 RMS voltage
0.65
-55 to +150
*3 Continuous reverse voltage
*4 Maximum forward voltage
RATING AND CHARACTERISTIC CURVES (MBR0520-N THRU MBR0560-N)
FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT,(A)
FIG.2-TYPICAL FORWARD
CHARACTERISTICS
0.6
0.5
50
INSTANTANEOUS FORWARD CURRENT,(A)
BR
05
40
-
05
20
-
M
~M
M
BR
M
BR
05
50
-M
~M
BR
05
60
-
M
M
0.4
R
MB
R0
MB
55
0.3
0.2
0.1
0
0
20
40
60
80
10
AMBIENT TEMPERATURE,( C)
FIG.3-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
15
05
0-
100
20
-N
0
BR
~M
54
0-
N
R
MB
N~
05
60
-N
1.0
0.5
120
140
160
180
200
Tj=25 C
Pulse Width 300us
1% Duty Cycle
0.1
PEAK FORWARD SURGE CURRENT,(A)
12
.01
.1
.3
.5
.7
.9
1.1
1.3
1.5
9
Tj=25 C
8.3ms Single Half
Sine Wave
JEDEC method
FORWARD VOLT
AGE,(V)
6
3
FIG.5 - TYPICAL REVERSE
0
1
5
10
50
100
CHARACTERISTICS
100
NUMBER OF CYCLES AT 60Hz
FIG.4-TYPICAL JUNCTION CAPACITANCE
350
300
250
200
150
100
50
0
JUNCTION CAPACITANCE,(pF)
REVERSE LEAKAGE CURRENT, (mA)
10
1.0
Tj=75 C
.1
Tj=25 C
.01
.05
.1
.5
1
5
10
50
100
.01
0
20
40
60
80
100 120 140
REVERSE VOLTAGE,(V)
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
Embedded System
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