SMTA5-700
Phase Control Thyristor
Type
SMTA5-700-50
SMTA5-700-52
SMTA5-700-55
SMTA5-700-60
SMTA5-700-65
V
RSM
5100
5300
5600
6100
6600
V
RRM
,
V
DRM
5000
5200
5500
6000
6500
Symbol
I
TAVM
I
TRMS
I
TSM
2
Parameter
average on-state current
maximum RMS
on-state current
surge-current
Test Conditions
T
C
=100
O
C
T
VJ
=T
VJM
T
C
=25
O
C; t
P
=10ms
T
VJ
=T
VJM
; t
P
=10ms
T
C
=25
O
C; t
P
=10ms
T
VJ
=T
VJM
; t
P
=10ms
Value
700
1650
10
11
500
605
Unit
A
A
kA
kA
2
·s
it
i t-value
2
(di/dt)
cr
critical rate of rise
of on-state current
critical rate of rise
of off-state volvage
off-state Leakage current
reverse repeat
Peak value voltage
off state repeat
Peak value voltage
non-repetitive
peak reverse voltage
on-state voltage
slope resistance
gate trigger voltage
gate trigger current
gate non-trigger voltage
gate non-trigger current
holding current
latching current
T
VJ
=T
VJM
; V
D
=0.67·V
DRM
;
f=50
Hz; i
GM
=3A;
di
G
/dt=6A/µs
T
VJ
=T
VJM
; V
D
=0.67·V
DRM
;
gate open
T
VJ
=T
VJM
; V
R
=V
RRM
; V
D
=V
DRM
T
VJ
=T
VJM
;
180
O
C sine wave,
50 Hz; gate open
250
A/
µ
s
(dv/dt)
cr
I
RRM
/I
DRM
V
RRM
V
DRM
V
RSM
V
TM
r
T
V
GT
I
GT
V
GD
I
GD
I
H
I
L
1000
200
5000-6500
5000-6500
5100-6600
2.19
0.97
2.5
250
0.4
10
350
V/
µ
s
mA
V
V
V
V
mW
V
mA
V
mA
mA
T
VJ
=T
VJM
T
VJ
=T
VJM
; I
TM
=1000A
T
VJ
=T
VJM
T
VJ
=25
O
C; V
D
=12V
T
VJ
=25
O
C; V
D
=12V
T
VJ
=T
VJM
; V
D
=0.67·V
DRM
T
VJ
=T
VJM
; V
D
=0.67·V
DRM
T
VJ
=25
O
C; V
D
=12V; gate open
T
VJ
=25
O
C; V
D
=12V;
t
G
=20µs; i
GM
=3A;
di
G
/dt=6A/µs
400
mA
SEMPO
Electronic Limited
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t
gd
delay time
turn-off time
T
VJ
=25
O
C; V
D
=0.5·V
DRM
;
i
GM
=3A; di
G
/dt=6A/µs
T
VJ
=T
VJM
; I
T
=I
TAVM
;
t
P
=200µs; di
R
/dt=10A/µs;
V
D
=0.67·V
DRM
;V
R
=100V;
dV
D
/dt=20V/µs
T
VJ
=T
VJM
; I
T
=I
TAVM
;di
R
/dt=10A/µs;
V
R
=0.5·V
RRM
;V
RM
=0.8·V
RRM
T
VJ
=T
VJM
2
µ
s
t
q
350
µ
s
Q
r
V
TO
T
VJ
T
VJM
T
stg
R
thJÑ
R
thÑH
F
W
à
recovered charge
threshold voltage
working junction
temperature
maximum
working junction temperature
storage temperature
thermal resistance;
junction to case
thermal resistance;
case to heatsink
clamping force
weight
maximum
allowable acceleration
7.5
1.22
mAs
V
O
-40...+125
125
-40...+125
DC, two-sided cooling
two-sided cooling
0.022
0.007
22
610
50
C
O
C
C
O
K/W
K/W
kN
g
m/s
2
2-
i
3.5H
2
20
°
i
73 max
i
47
26.5
i
47
i
66
SEMPO
Electronic Limited
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1400
1200
1000
typ.
800
max.
I
T
[A]
600
400
200
0
0
0.5
1
1.5
V
T
[V]
2
2.5
3
3.5
Limiting on-state characteristic i
T
= f (V
T
)
Ò
Vj
= T
Vj max
SEMPO
Electronic Limited
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30
20
10
ñ
5
a
-40°Ñ
2
+25°Ñ
+125°Ñ
1
b
0.5
0.2
10
20
50
100
200
i
G
[mA]
500
1000
2000
5000
10000
Gate characteristic V
G
=f(i
G
) with triggering area for V
D
= 6V
Maximum rated peak gate power dissipation P
GM
= f (t
g
):
a - 20 W (10ms)
b - 40 W (1ms)
c - 60 W (0.5ms)
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Electronic Limited
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0.03
0.025
0.015
0.01
0.005
0.001
0.01
0.1
t [s]
1
10
0
100
Transient thermal impedance Z
thJC
= f(t)
DC, two-sided cooling
Features:
C
Hermetic metal case with ceramic insulator
C
Capsule packages for double sided cooling
C
International standard case
C
Amplifying gates
Typical Applications:
C
DC motor control
C
AC motor soft starter
C
Controlled rectifiers
C
AC controllers
SEMPO
Electronic Limited
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Z
th JC
[K/W]
0.02
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