®
P01xxxL
0.25A SCR
S
A
SENSITIVE
Table 1: Main Features
Symbol
I
T(RMS)
V
DRM
/V
RRM
I
GT
Value
0.25
100 and 200
1 and 200
Unit
A
V
µA
A
G
K
G
DESCRIPTION
Thanks to highly sensitive triggering levels, the
P01xxxL
SCR series is suitable for all applications
where the available gate current is limited such as
stand-by mode power supplies, smoke and alarm
detectors...
Available in SOT23-3L, it provides optimized
space saving on high density printed circuit
boards.
K
SOT23-3L
Table 2: Order Codes
Part Numbers
P0102AL 5AA4
P0102BL 5AA4
P0109AL 5AA4
Marking
P2A
P2B
P9A
Table 3: Absolute Ratings
(limiting values)
Symbol
Parameter
I
T(RMS)
IT
(AV)
I
TSM
I
²
t
dI/dt
I
GM
P
G(AV)
T
stg
T
j
RMS on-state current (180° conduction angle)
Average on-state current (180° conduction angle)
Non repetitive surge peak on-state
current
I
²
t Value for fusing
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, t
r
≤
100 ns
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
t
p
= 8.3 ms
t
p
= 10 ms
t
p
= 10 ms
F = 60 Hz
t
p
= 20 µs
T
amb
= 36°C
T
amb
= 36°C
T
j
= 25°C
T
j
= 25°C
T
j
= 125°C
T
j
= 125°C
T
j
= 125°C
Value
0.25
0.16
7
Unit
A
A
A
6
0.18
50
0.5
0.02
- 40 to + 150
- 40 to + 125
A
2S
A/µs
A
W
°C
April 2005
REV. 4
1/7
P01xxxL
Tables 4: Electrical Characteristics
(T
j
= 25°C, unless otherwise specified)
Symbol
Test Conditions
P0102xL
I
GT
V
GT
V
GD
V
RG
I
H
I
L
dV/dt
V
TM
V
t0
R
d
I
DRM
I
RRM
V
D
= 12 V
R
L
= 140
Ω
T
j
= 125°C
MAX.
MAX.
MIN.
MIN.
R
GK
= 1 kΩ
R
GK
= 1 kΩ
R
GK
= 1 kΩ
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
MAX.
MAX.
MIN.
MAX.
MAX.
MAX.
MAX.
100
200
1.7
1.0
1000
1
µA
200
0.8
0.1
8
6
7
100
P0109AL
1
Unit
µA
V
V
V
mA
mA
V/µs
V
V
mΩ
V
D
= V
DRM
R
L
= 3.3 kΩ R
GK
= 1 kΩ
I
RG
= 10 µA
I
T
= 50 mA
I
G
= 1 mA
V
D
= 67 % V
DRM
I
TM
= 0.4 A
tp = 380 µs
Threshold voltage
Dynamic resistance
V
DRM
= V
RRM
Table 5: Thermal resistance
Symbol
R
th(j-a)
Parameter
Value
400
Unit
°C/W
Junction to ambient (mounted on FR4 with recommended pad layout)
Figure 1: Maximum average power dissipation
versus average on-state current
P(W)
0.30
0.28
0.26
0.24
0.22
0.20
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0.00
0.00
Figure 2: Average and D.C. on-state current
versus case temperature
I
T(AV)
(A)
0.30
α
= 180°
0.25
D.C.
0.20
0.15
0.10
360°
α
= 180°
0.05
I
T(AV)
(A)
0.02
0.04
0.06
0.08
0.10
0.12
α
0.00
0.14
0.16
0.18
T
case
(°C)
0
25
50
75
100
125
2/7
P01xxxL
Figure 3: Relative variation of thermal
impedance junction to ambient versus pulse
duration
K=[Z
th(j-a)
/R
th(j-a)
]
1.00
6
5
4
Figure 4: Relative variation of gate trigger
current, holding current and latching current
versus junction temperature (typical values)
I
GT
,I
H
,I
L
[T
j
] / I
GT
,I
H
,I
L
[T
j
=25°C]
0.10
3
I
GT
2
1
I
H
& I
L
R
GK
= 1k
Ω
0.01
1E-2
1E-1
t
p
(s)
1E+0
1E+1
1E+2
0
-40
-20
0
T
j
(°C)
20
40
60
80
100
120
140
Figure 5: Relative variation of holding current
versus gate-cathode resistance (typical
values)
I
H
[R
GK
] / I
H
[R
GK
=1k
Ω
]
20
T
j
= 25°C
Figure 6: Relative variation of dV/dt immunity
versus gate-cathode resistance (typical
values)
dV/dt[R
GK
] / dV/dt[R
GK
=1k
Ω
]
10.0
T
j
= 125°C
V
D
= 0.67 x V
DRM
18
16
14
12
10
8
6
4
2
0
1E-2
1E-1
1.0
R
GK
(k
Ω
)
1E+0
1E+1
0.1
0
200
400
600
800
R
GK
(k
Ω
)
1000
1200
1400
1600
1800
2000
Figure 7: Relative variation of dV/dt immunity
versus gate-cathode capacitance (typical
values)
dV/dt[C
GK
] / dV/dt[R
GK
=1k
Ω
]
10
V
D
= 0.67 x V
DRM
T
j
= 125°C
R
GK
= 1k
Ω
Figure 8: Surge peak on-state current versus
number of cycles
I
TSM
(A)
7
6
t
p
=10ms
8
5
6
One cycle
4
3
2
Non repetitive
T
j
initial=25°C
4
2
1
Repetitive
T
amb
=25°C
Number of cycles
10
100
1000
0
0
1
2
C
GK
(nF)
3
4
5
6
7
0
1
3/7
P01xxxL
Figure 9: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width t
p
< 10ms,
and corresponding value of I²t
I
TSM
(A), I
2
t (A
2
s)
100.0
T
j
initial = 25°C
Figure 10: On-state characteristics (maximum
values)
I
TM
(A)
1E+1
T
j
max.:
V
t0
=1.0V
R
d
=1
Ω
T
j
=max
I
TSM
10.0
1E+0
T
j
=25°C
1.0
1E-1
I
2
t
t
p
(ms)
0.1
0.01
0.10
1.00
10.00
1E-2
0.5
1.0
1.5
2.0
2.5
V
TM
(V)
3.0
3.5
4.0
4.5
5.0
5.5
6.0
Figure 11: Thermal resistance junction to
ambient versus copper surface under tab
(Epoxy printed circuit board FR4, copper
thickness: 35 mm)
R
th(j-a)
(°C/W)
500
400
300
200
100
S(cm²)
0
0
10
20
30
40
50
60
70
80
90
100
Figure 12: Ordering Information Scheme
P 01 02 A L
Sensitive SCR series
Current
01 = 0.25A
Sensitivity
02 = 200µA
09 = 1µA
Voltage
A = 100V
B = 200V
Package
L = SOT23-3L
Packing mode
5AA4 = Tape & Reel
Blank
5AA4
4/7
P01xxxL
Table 6: Product Selector
Part Number
P0102AL 5AA4
P0102BL 5AA4
P0109AL 5AA4
Voltage
100 V
200 V
100 V
Sensitivity
200 µA
200 µA
1 µA
Package
SOT23-3L
Figure 13: SOT23-3L Package Mechanical Data
DIMENSIONS
A
E
REF.
A
Millimeters
Min.
0.89
0
0.3
0.085
2.75
0.85
1.7
1.2
2.1
0.35
Max.
1.4
0.1
0.51
0.18
3.04
1.05
2.1
1.6
2.75
0.65
Inches
Min.
0.035
0
0.012
0.003
0.108
0.033
0.067
0.047
0.083
0.014
Max.
0.055
0.004
0.02
0.007
0.12
0.041
0.083
0.063
0.108
0.026
e
B
e1
D
A1
B
c
D
e
A1
S
e1
E
H
L
S
L
H
c
0.6 typ.
0.024 typ.
Figure 14: Foot Print Dimensions
(in millimeters)
0.95
0.61
1.26
0.73
3.25
5/7
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