PNP Silicon Switching Transistor
q
High DC current gain 0.1 mA to 100 mA
q
Low collector-emitter saturation voltage
q
Complementary type: PZT 3904 (NPN)
PZT 3906
Type
PZT 3906
Marking
ZT 3906
Ordering Code
(tape and reel)
Q62702-Z2030
Pin Configuration
1
2
3
4
B
C
E
C
Package
1)
SOT-223
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Total power dissipation,
T
S
= 80 ˚C
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient
2)
Junction - soldering point
R
th JA
R
th JS
≤
117
≤
47
Symbol
V
CE0
V
CB0
V
EB0
I
C
P
tot
T
j
T
stg
Values
40
40
5
200
1.5
150
– 65 … + 150
Unit
V
mA
W
˚C
K/W
1)
2)
For detailed information see chapter Package Outlines.
Package mounted on epoxy pcb 40 mm
×
40 mm
×
1.5 mm/6 cm
2
Cu.
Semiconductor Group
1
5.91
PZT 3906
Electrical Characteristics
at
T
A
= 25 ˚C, unless otherwise specified.
Parameter
Symbol
min.
DC characteristics
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
Collector-base breakdown voltage
I
C
= 10
µ
A,
I
B
= 0
Emitter-base breakdown voltage
I
E
= 10
µ
A,
I
C
= 0
Collector-base cutoff current
V
CB
= 30 V,
I
E
= 0
Collector-emitter cutoff current
V
CE
= 30 V, +
V
BE
= 0.5 V
Collector-base cutoff current
V
CE
= 30 V, +
V
BE
= 0.5 V
DC current gain
1)
I
C
= 0.1 mA,
V
CE
= 1 V
I
C
= 1 mA,
V
CE
= 1 V
I
C
= 10 mA,
V
CE
= 1 V
I
C
= 50 mA,
V
CE
= 1 V
I
C
= 100 mA,
V
CE
= 1 V
Collector-emitter saturation voltage
1)
I
C
= 10 mA,
I
B
= 1 mA
I
C
= 50 mA,
I
B
= 5 mA
Base-emitter saturation voltage
1)
I
C
= 10 mA,
I
C
= 1 mA
I
C
= 50 mA,
I
C
= 5 mA
V
(BR)CE0
V
(BR)CB0
V
(BR)EB0
I
CB0
I
CEV
I
BEV
h
FE
60
80
100
60
30
V
CEsat
–
–
V
BEsat
–
–
–
–
0.85
0.95
–
–
0.25
0.4
–
–
–
–
–
–
–
300
–
–
V
40
40
5
–
–
–
–
–
–
–
–
–
–
–
–
50
50
50
–
nA
V
Values
typ.
max.
Unit
1)
Pulse test conditions:
t
≤
300
µ
s,
D
= 2 %
Semiconductor Group
2
PZT 3906
Electrical Characteristics
at
T
A
= 25 ˚C, unless otherwise specified.
Parameter
Symbol
min.
AC characteristics
Transition frequency
I
C
= 10 mA,
V
CE
= 20 V,
f
= 100 MHz
Collector-base capacitance
V
CB
= 5 V,
f
= 1 MHz
Input capacitance
V
EB
= 0.5 V,
f
= 1 MHz
Noise figure
I
C
= 100
µ
A,
V
CE
= 5 V,
R
S
= 1 kΩ,
f
= 10 Hz to 15.7 kHz
Input impedance
I
C
= 1 mA,
V
CE
= 10 V,
f
= 1 kHz
Open-circuit reverse voltage transfer ratio
I
C
= 1 mA,
V
CE
= 10 V,
f
= 1 kHz
Short-circuit forward current transfer ratio
I
C
= 1 mA,
V
CE
= 10 V,
f
= 1 kHz
Open-circuit output admittance
I
C
= 1 mA,
V
CE
= 10 V,
f
= 1 kHz
V
CC
= 3 V,
I
C
= 10 mA,
I
B1
= 1 mA
V
BE(off)
= 0.5 V
Delay time
Rise time
V
CC
= 3 V,
I
C
= 10 mA,
I
B1
=
I
B2
= 1 mA
Storage time
Fall time
(see diagrams)
f
T
C
obo
C
ibo
F
250
–
–
–
–
–
–
–
–
4.5
10
4
dB
MHz
pF
Values
typ.
max.
Unit
h
11e
h
12e
h
21e
h
22e
2
0.1
100
3
–
–
–
–
12
10
400
60
kΩ
10
– 4
–
µ
S
t
d
t
r
t
stg
t
f
–
–
–
–
–
–
–
–
35
35
225
75
ns
ns
ns
ns
Semiconductor Group
3
PZT 3906
Switching Times
Turn-on time when switched from +
V
BEoff
= 0.5 V to
– V
BEon
= 10.6 V,
– I
Con
= 10 mA;
– I
Bon
= 1 mA
Input waveform;
t
r
<
1 ns;
t
p
= 300 ns;
δ
= 0.02.
Turn-off time
I
Con
= 10 mA;
I
Bon
= –
I
Boff
= 1 mA
Delay and rise time test circuit; total shunt
capacitance of test jig and connectors
C
S
<
4 pF; scope impedance = 10 MΩ.
Input waveform;
t
f
<
1 ns; 10
µ
s
<
t
p
≤
500
µ
s;
δ
= 0.02.
Storage and fall time test circuit; total shunt
capacitance of test jig and connectors
C
S
<
4 pF; scope impedance = 10 MΩ.
Semiconductor Group
4
PZT 3906
Total power dissipation
P
tot
=
f
(T
A
*;
T
S
)
* Package mounted on epoxy
Saturation voltage
I
C
=
f
(V
BEsat
,
V
CEsat
)
h
FE
= 10
DC current gain
h
FE
=
f
(I
C
)
V
CE
= 1 V, normalized
Permissible pulse load
P
tot max
/
P
tot DC
=
f
(t
p
)
Semiconductor Group
5
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