PDTB123E series
PNP 500 mA, 50 V resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 2.2 kΩ
Rev. 01 — 27 April 2005
Product data sheet
1. Product profile
1.1 General description
500 mA PNP Resistor-Equipped Transistors (RET) family.
Table 1:
Product overview
Package
Philips
PDTB123EK
PDTB123ES
[1]
PDTB123ET
[1]
Type number
NPN complement
JEITA
SC-59A
SC-43A
-
JEDEC
TO-236
TO-92
TO-236AB
PDTD123EK
PDTD123ES
PDTD123ET
SOT346
SOT54
SOT23
Also available in SOT54A and SOT54 variant packages (see
Section 2).
1.2 Features
s
Built-in bias resistors
s
Simplifies circuit design
s
500 mA output current capability
s
Reduces component count
s
Reduces pick and place costs
s
±10
% resistor ratio tolerance
1.3 Applications
s
Digital application in automotive and
industrial segments
s
Controlling IC inputs
s
Cost-saving alternative for BC807 series
in digital applications
s
Switching loads
1.4 Quick reference data
Table 2:
Symbol
V
CEO
I
O
R1
R2/R1
Quick reference data
Parameter
collector-emitter voltage
output current (DC)
bias resistor 1 (input)
bias resistor ratio
Conditions
open base
Min
-
-
1.54
0.9
Typ
-
-
2.2
1.0
Max
−50
−500
2.86
1.1
Unit
V
mA
kΩ
Philips Semiconductors
PDTB123E series
PNP 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
2. Pinning information
Table 3:
Pin
SOT54
1
2
3
input (base)
output (collector)
GND (emitter)
1
2
3
001aab347
006aaa148
Pinning
Description
Simplified outline
Symbol
2
R1
1
R2
3
SOT54A
1
2
3
input (base)
output (collector)
GND (emitter)
1
2
3
001aab348
006aaa148
2
R1
1
R2
3
SOT54 variant
1
2
3
input (base)
output (collector)
GND (emitter)
1
2
3
001aab447
006aaa148
2
R1
1
R2
3
SOT23, SOT346
1
2
3
input (base)
GND (emitter)
output (collector)
1
2
006aaa144
sym003
3
R1
3
1
R2
2
9397 750 14904
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 27 April 2005
2 of 10
Philips Semiconductors
PDTB123E series
PNP 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
3. Ordering information
Table 4:
Ordering information
Package
Name
PDTB123EK
PDTB123ES
[1]
PDTB123ET
[1]
Type number
Description
plastic surface mounted package; 3 leads
plastic single-ended leaded (through hole) package;
3 leads
plastic surface mounted package; 3 leads
Version
SOT346
SOT54
SOT23
SC-59A
SC-43A
-
Also available in SOT54A and SOT54 variant packages (see
Section 2
and
Section 9).
4. Marking
Table 5:
Marking codes
Marking code
[1]
E2
B123ES
*7S
Type number
PDTB123EK
PDTB123ES
PDTB123ET
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 6:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
V
I
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
positive
negative
I
O
P
tot
output current (DC)
total power dissipation
SOT346
SOT54
SOT23
T
stg
T
j
T
amb
[1]
Conditions
open emitter
open base
open collector
Min
-
-
-
-
-
-
Max
−50
−50
−10
+10
−12
−500
250
500
250
+150
150
+150
Unit
V
V
V
V
V
mA
mW
mW
mW
°C
°C
°C
T
amb
≤
25
°C
[1]
[1]
[1]
-
-
-
−65
-
−65
storage temperature
junction temperature
ambient temperature
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
9397 750 14904
Product data sheet
Rev. 01 — 27 April 2005
3 of 10
Philips Semiconductors
PDTB123E series
PNP 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
6. Thermal characteristics
Table 7:
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
SOT346
SOT54
SOT23
[1]
Conditions
in free air
[1]
Min
Typ
Max
Unit
-
-
-
-
-
-
500
250
500
K/W
K/W
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7. Characteristics
Table 8:
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol Parameter
I
CBO
I
CEO
I
EBO
h
FE
V
CEsat
V
I(off)
V
I(on)
R1
R2/R1
C
c
Conditions
Min
-
-
-
-
40
-
−0.6
−1.0
1.54
0.9
-
Typ
-
-
-
-
-
-
−1.1
−1.5
2.2
1.0
11
Max
−100
−100
−0.5
−2.0
-
−0.3
−1.8
−2.0
2.86
1.1
-
pF
mV
V
V
kΩ
Unit
nA
nA
µA
mA
collector-base cut-off V
CB
=
−40
V; I
E
= 0 A
current
V
CB
=
−50
V; I
E
= 0 A
collector-emitter
cut-off current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
off-state input
voltage
on-state input
voltage
bias resistor 1 (input)
bias resistor ratio
collector capacitance V
CB
=
−10
V; I
E
= i
e
= 0 A;
f = 100 MHz
V
CE
=
−50
V; I
B
= 0 A
V
EB
=
−5
V; I
C
= 0 A
V
CE
=
−5
V; I
C
=
−50
mA
I
C
=
−50
mA;
I
B
=
−2.5
mA
V
CE
=
−5
V; I
C
=
−100 µA
V
CE
=
−0.3
V;
I
C
=
−20
mA
9397 750 14904
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 27 April 2005
4 of 10
Philips Semiconductors
PDTB123E series
PNP 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ
10
3
(1)
006aaa353
−10
−1
006aaa354
h
FE
10
2
(2)
(3)
V
CEsat
(V)
(1)
(2)
(3)
10
1
10
−1
−10
−1
−1
−10
−10
2
I
C
(mA)
−10
3
−10
−2
−1
−10
I
C
(mA)
−10
2
V
CE
=
−5
V
(1) T
amb
= 100
°C
(2) T
amb
= 25
°C
(3) T
amb
=
−40 °C
I
C
/I
B
= 20
(1) T
amb
= 100
°C
(2) T
amb
= 25
°C
(3) T
amb
=
−40 °C
Fig 1. DC current gain as a function of collector
current; typical values
−10
006aaa355
Fig 2. Collector-emitter saturation voltage as a
function of collector current; typical values
−10
006aaa356
V
I(on)
(V)
(1)
(2)
(3)
V
I(off)
(V)
(1)
(2)
(3)
−1
−1
−10
−1
−10
−1
−1
−10
−10
2
I
C
(mA)
−10
3
−10
−1
−10
−1
−1
I
C
(mA)
−10
V
CE
=
−0.3
V
(1) T
amb
=
−40 °C
(2) T
amb
= 25
°C
(3) T
amb
= 100
°C
V
CE
=
−5
V
(1) T
amb
=
−40 °C
(2) T
amb
= 25
°C
(3) T
amb
= 100
°C
Fig 3. On-state input voltage as a function of collector
current; typical values
Fig 4. Off-state input voltage as a function of collector
current; typical values
9397 750 14904
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 27 April 2005
5 of 10
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