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PDTB123E

Description
PNP 500 mA, 50 V resistor-equipped transistors R1 = 2.2 kW, R2 = 2.2 kW
File Size63KB,10 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
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PDTB123E Overview

PNP 500 mA, 50 V resistor-equipped transistors R1 = 2.2 kW, R2 = 2.2 kW

PDTB123E series
PNP 500 mA, 50 V resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 2.2 kΩ
Rev. 01 — 27 April 2005
Product data sheet
1. Product profile
1.1 General description
500 mA PNP Resistor-Equipped Transistors (RET) family.
Table 1:
Product overview
Package
Philips
PDTB123EK
PDTB123ES
[1]
PDTB123ET
[1]
Type number
NPN complement
JEITA
SC-59A
SC-43A
-
JEDEC
TO-236
TO-92
TO-236AB
PDTD123EK
PDTD123ES
PDTD123ET
SOT346
SOT54
SOT23
Also available in SOT54A and SOT54 variant packages (see
Section 2).
1.2 Features
s
Built-in bias resistors
s
Simplifies circuit design
s
500 mA output current capability
s
Reduces component count
s
Reduces pick and place costs
s
±10
% resistor ratio tolerance
1.3 Applications
s
Digital application in automotive and
industrial segments
s
Controlling IC inputs
s
Cost-saving alternative for BC807 series
in digital applications
s
Switching loads
1.4 Quick reference data
Table 2:
Symbol
V
CEO
I
O
R1
R2/R1
Quick reference data
Parameter
collector-emitter voltage
output current (DC)
bias resistor 1 (input)
bias resistor ratio
Conditions
open base
Min
-
-
1.54
0.9
Typ
-
-
2.2
1.0
Max
−50
−500
2.86
1.1
Unit
V
mA
kΩ

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Description PNP 500 mA, 50 V resistor-equipped transistors R1 = 2.2 kW, R2 = 2.2 kW PNP 500 mA, 50 V resistor-equipped transistors R1 = 2.2 kW, R2 = 2.2 kW PNP 500 mA, 50 V resistor-equipped transistors R1 = 2.2 kW, R2 = 2.2 kW PNP 500 mA, 50 V resistor-equipped transistors R1 = 2.2 kW, R2 = 2.2 kW PNP 500 mA, 50 V resistor-equipped transistors R1 = 2.2 kW, R2 = 2.2 kW
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