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3N250-E4-51

Description
LDO Voltage Regulators
Categorysemiconductor    Discrete semiconductor   
File Size89KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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LDO Voltage Regulators

3N250-E4-51 Parametric

Parameter NameAttribute value
Product CategoryBridge Rectifiers
ManufacturerVishay
RoHSDetails
TypeSingle Phase Bridge
Mounting StyleThrough Hole
Termination StyleThrough Hole
Package / CaseKBPM
Peak Reverse Voltage600 V
Vf - Forward Voltage1.3 V
Max Surge Current60 A
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Length15.24 mm
Width5.08 mm
Height11.68 mm
PackagingBulk
Ir - Reverse Current5 uA
ProductBridge Rectifiers
Factory Pack Quantity600
Vr - Reverse Voltage420 V
Unit Weight0.066844 oz
KBPxxM-E4, 3N2xx-E4
www.vishay.com
Vishay General Semiconductor
Glass Passivated Single-Phase Bridge Rectifier
FEATURES
• UL recognition file number E54214
• Ideal for printed circuit board
• High surge current capability
• High case dielectric strength
~
~
+
Case Style KBPM
• Solder dip 275 °C max. 10 s, per JESD 22-B106
+
~
~
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for switching power supply, home appliances, office
equipment, and telecommunication applications.
PRIMARY CHARACTERISTICS
Package
I
F(AV)
V
RRM
I
FSM
I
R
V
F
at I
F
= 1.0 A
T
J
max.
Diode variations
KBPM
1.5 A
50 V to 1000 V
60 A
5 μA
1.0 V
150 °C
In-Line
MECHANICAL DATA
Case:
KBPM
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E4 - RoHS-compliant, commercial grade
Terminals:
Silver plated
J-STD-002 and JESD22-B102
Polarity:
As marked on body
leads,
solderable
per
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
(1)
Maximum RMS voltage
(1)
Maximum DC blocking voltage
(1)
Maximum average forward output rectified
current at T
A
= 40 °C
Peak forward surge current
single half sine-wave
(1)
Rating for fusing (t < 8.3 ms)
Operating junction and storage
temperature range
(1)
T
A
= 25 °C
T
A
= 150 °C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
T
J
, T
STG
KBP005M KBP01M KBP02M KBP04M KBP06M KBP08M KBP10M
3N246
50
35
50
3N247
100
70
100
3N248
200
140
200
3N249
400
280
400
1.5
60
40
10
-55 to +150
3N250
600
420
600
3N251
800
560
800
3N252
1000
700
1000
UNIT
V
V
V
A
A
A
2
s
°C
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous
forward voltage drop per
diode
(1)
Maximum DC reverse
current at rated DC blocking
voltage per diode
(1)
Typical junction
capacitance per diode
Note
(1)
JEDEC
®
registered values
Revision: 23-Sep-14
Document Number: 88531
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
TEST
CONDITIONS
1.0 A
1.57 A
T
J
= 25 °C
T
J
= 125 °C
4.0 V, 1 MHz
V
F
SYMBOL KBP005M KBP01M KBP02M KBP04M KBP06M KBP08M KBP10M UNIT
1.0
1.3
5.0
I
R
C
J
500
15
μA
pF
V
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