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71T75802S200BGG

Description
SRAM 2.5V CORE ZBT X18 18M
Categorystorage   
File Size1MB,24 Pages
ManufacturerIDT (Integrated Device Technology, Inc.)
Websitehttp://www.idt.com/
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71T75802S200BGG Overview

SRAM 2.5V CORE ZBT X18 18M

71T75802S200BGG Parametric

Parameter NameAttribute value
Product CategorySRAM
ManufacturerIDT (Integrated Device Technology, Inc.)
RoHSDetails
Memory Size18 Mbit
Organization1 M x 18
Access Time3.2 ns
Maximum Clock Frequency200 MHz
Interface TypeParallel
Supply Voltage - Max2.625 V
Supply Voltage - Min2.375 V
Supply Current - Max275 mA
Minimum Operating Temperature0 C
Maximum Operating Temperature+ 70 C
Mounting StyleSMD/SMT
Package / CasePBGA-119
PackagingTray
Height2.15 mm
Length14 mm
Memory TypeSDR
Operating Temperature Range0 C to + 70 C
Factory Pack Quantity84
TypeSynchronous
Width22 mm
512K x 36, 1M x 18
2.5V Synchronous ZBT™ SRAMs
2.5V I/O, Burst Counter
Pipelined Outputs
Features
• 512K x 36, 1M x 18 memory configurations
• Supports high performance system speed - 200 MHz
(3.2 ns Clock-to-Data Access)
• ZBT
TM
Feature - No dead cycles between write and read
cycles
• Internally synchronized output buffer enable eliminates the
need to control
OE
• Single R/W (READ/WRITE) control pin
• Positive clock-edge triggered address, data, and control
signal registers for fully pipelined applications
• 4-word burst capability (interleaved or linear)
• Individual byte write (BW
1
-
BW
4
) control (May tie active)
• Three chip enables for simple depth expansion
• 2.5V power supply (±5%)
• 2.5V I/O Supply (V
DDQ
)
• Power down controlled by ZZ input
• Boundary Scan JTAG Interface (IEEE 1149.1 Compliant)
• Packaged in a JEDEC standard 100-pin plastic thin quad
flatpack (TQFP), 119 ball grid array (BGA)
IDT71T75602
IDT71T75802
The IDT71T75602/802 are 2.5V high-speed 18,874,368-bit
(18 Megabit) synchronous SRAMs. They are designed to eliminate dead
bus cycles when turning the bus around between reads and writes, or
writes and reads. Thus, they have been given the name ZBT
TM
, or Zero
Bus Turnaround.
Address and control signals are applied to the SRAM during one
clock cycle, and two cycles later the associated data cycle occurs, be it
read or write.
The IDT71T75602/802 contain data I/O, address and control signal
registers. Output enable is the only asynchronous signal and can be used
to disable the outputs at any given time.
A Clock Enable
CEN
pin allows operation of the IDT71T75602/802
to be suspended as long as necessary. All synchronous inputs are ignored
when (CEN) is high and the internal device registers will hold their previous
values.
There are three chip enable pins (CE
1
, CE
2
,
CE
2
) that allow the
user to deselect the device when desired. If any one of these three is not
asserted when ADV/LD is low, no new memory operation can be initiated.
However, any pending data transfers (reads or writes) will be completed.
Description
Pin Description Summary
A
0
-A
19
CE
1
, CE
2
,
CE
2
OE
R/W
CEN
BW
1
,
BW
2
,
BW
3
,
BW
4
CLK
ADV/LD
LBO
TMS
TDI
TCK
TDO
TRST
ZZ
I/O
0
-I/O
31
, I/O
P1
-I/O
P4
V
DD
, V
DDQ
V
SS
Address Inputs
Chip Enables
Output Enable
Read/Write Signal
Clock Enable
Individual Byte Write Selects
Clock
Advance burst address / Load new address
Linear / Interleaved Burst Order
Test Mode Select
Test Data Input
Test Clock
Test Data Input
JTAG Reset (Optional)
Sleep Mode
Data Input / Output
Core Power, I/O Power
Ground
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Input
Output
Input
Input
I/O
Supply
Supply
Synchronous
Synchronous
Asynchronous
Synchronous
Synchronous
Synchronous
N/A
Synchronous
Static
N/A
N/A
N/A
N/A
Asynchronous
Synchronous
Synchronous
Static
Static
APRIL 2012
1
©2012 Integrated Device Technology, Inc.
DSC-5313/10
5313 tbl 01

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Description SRAM 2.5V CORE ZBT X18 18M SRAM 2.5V CORE ZBT X18 18M SRAM 2.5V CORE ZBT X18 18M SRAM 2.5V CORE ZBT X18 18M SRAM X18 18M 2.5V CORE ZBT SLO
Product Category SRAM SRAM SRAM SRAM SRAM SRAM
Manufacturer IDT (Integrated Device Technology, Inc.) IDT (Integrated Device Technology, Inc.) IDT (Integrated Device Technology, Inc.) IDT (Integrated Device Technology, Inc.) IDT (Integrated Device Technology, Inc.) IDT (Integrated Device Technology, Inc.)
RoHS Details Details Details Details Details No
Memory Size 18 Mbit 18 Mbit 18 Mbit 18 Mbit 18 Mbit 18 Mbit
Organization 1 M x 18 1 M x 18 1 M x 18 1 M x 18 512 k x 36 1 M x 18
Access Time 3.2 ns 3.2 ns 3.2 ns 3.2 ns 4.2 ns 3.8 ns
Maximum Clock Frequency 200 MHz 200 MHz 200 MHz 200 MHz 133 MHz 150 MHz
Interface Type Parallel Parallel Parallel Parallel Parallel Parallel
Supply Voltage - Max 2.625 V 2.5 V 2.5 V 2.625 V 2.625 V 2.625 V
Supply Voltage - Min 2.375 V 2.5 V 2.5 V 2.375 V 2.375 V 2.375 V
Supply Current - Max 275 mA 275 mA 275 mA 275 mA 215 mA 215 mA
Minimum Operating Temperature 0 C - 40 C - 40 C 0 C 0 C 0 C
Maximum Operating Temperature + 70 C + 85 C + 85 C + 70 C + 70 C + 70 C
Package / Case PBGA-119 PBGA-119 TQFP-100 TQFP-100 TQFP-100 PBGA-119
Packaging Tray Reel Reel Tray Reel Tray
Height 2.15 mm 2.15 mm 1.4 mm 1.4 mm 1.4 mm 2.15 mm
Length 14 mm 14 mm 20 mm 20 mm 20 mm 14 mm
Memory Type SDR SDR SDR SDR SDR SDR
Factory Pack Quantity 84 1000 1000 72 1000 84
Type Synchronous Synchronous Synchronous Synchronous Synchronous Synchronous
Width 22 mm 22 mm 14 mm 14 mm 14 mm 22 mm
Mounting Style SMD/SMT - - SMD/SMT SMD/SMT SMD/SMT
Operating Temperature Range 0 C to + 70 C - - 0 C to + 70 C 0 C to + 70 C 0 C to + 70 C
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