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S1NBB80

Description
Bridge Rectifiers Bridge
Categorysemiconductor    Discrete semiconductor   
File Size276KB,4 Pages
ManufacturerSHINDENGEN
Websitehttps://www.shindengen.com
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S1NBB80 Overview

Bridge Rectifiers Bridge

S1NBB80 Parametric

Parameter NameAttribute value
Product CategoryBridge Rectifiers
ManufacturerSHINDENGEN
TypeSingle Phase Bridge
Mounting StylePCB Mount
Termination StyleThrough Hole
Package / CasePDIP SMD
Peak Reverse Voltage800 V
Vf - Forward Voltage1.05 V
Max Surge Current50 A
Maximum Operating Temperature+ 150 C
Length6.8 mm
Width6.5 mm
Height2.5 mm
Ir - Reverse Current10 uA
ProductBridge Rectifiers
SMD/DIP
Bridge Diode
■外観図 
OUTLINE
Package
1NA
SMD
6.8
品名略号
Type No.
④−
①+
S1NBB80
800V 1A
特長
• 小型 SMDパッケージ
または
• 小型 D
I
P パッケージ
• 端子間 3.4mm
Unit : mm
級表示
(例)
Class
ロッ
ト記号
(例)
Date code
S1NBB
8000
10.0
③∼
②∼
Feature
• Small-SMD
or
• Small-D
I
P
• Pin-distance 3.4mm for isolation
Package
1NA
DIP
6.8
品名略号
Type No.
④−
2.6
Unit : mm
①+
級表示
(例)
Class
ロッ
ト記号
(例)
Date code
SINBB
8000
6.5
③∼
②∼
外½図については新電元 Web サイト又は〈半導½½品一覧表〉をご参照
下さい。捺印表示については捺印仕様をご確認下さい。
For details of outline dimensions, refer to our web site or the Semiconductor
Terminal Connection.
■定格表
RATINGS
■定格表 
RATINGS
●絶対最大定格
Absolute Maximum Ratings(
指定のない場合
Tl = 25℃/
unless otherwise speci
項  目
Item
保存温度
Storage Temperature
接合部温度
Operation Junction Temperature
せん頭逆電圧
Maximum Reverse Voltage
出力電流
Average Rectified Forward Current
せん頭サージ順電流
Peak Surge Forward Current
電流二乗時間積
Current Squared Time
2.5
単½
Unit
V
A
A
A
2
s
記号
条 件
Symbol Conditions
T
stg
T
j
V
RM
I
O
I
FSM
I
2
t
50Hz 正弦波,抵抗負荷
50Hz sine wave,
Resistance load
Ta=26℃ *
1
Ta=25℃ *
2
品 名
Type No.
S1NBB80
−40∼150
150
800
1
0.84
50
6
50Hz 正弦波,非繰り返し1サイクルせん頭値,Tj = 25℃
50Hz sine wave, Non-repetitive 1cycle peak value, Tj = 25℃
1素子½たりの規格値
1ms≦t<10ms,Tj=25℃,
per
diode
●電気的・熱的特性 Electrical
Characteristics(
指定のない場合
Tl = 25℃/
unless otherwise speci
順電圧
Forward Voltage
逆電流
Reverse Current
熱抵抗
Thermal Resistance
V
μA
℃/W
V
F
I
R
θjl
θja
2
2
I
F =
0.5A,
パルス測定,1素子½たりの規格値
Pulse measurement, per diode
V
R =
V
RM, パルス測定,1素子½たりの規格値
Pulse measurement, per diode
接合部・リード間
Junction to Lead
接合部・周囲間
Junction to Ambient
MAX
MAX
MAX
1.05
10
15
68
84
*
1
*
2
MAX
MAX
*
1:プリント基板実装,銅箔パターン324mm
pad area 324mm
2
On glass-epoxy substrate, copper soldering
*
2:プリント基板実装,銅箔パターン101mm
pad area 101mm
2
On glass-epoxy substrate, copper soldering
(J534-p
〈2014.03〉

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