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M29DW641F70N6E

Description
Flash Memory STD FLASH 64 MEG
Categorystorage    storage   
File Size534KB,83 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
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M29DW641F70N6E Overview

Flash Memory STD FLASH 64 MEG

M29DW641F70N6E Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerSTMicroelectronics
Parts packaging codeTSOP
package instruction12 X 20 MM, LEAD FREE, PLASTIC, TSOP-48
Contacts48
Reach Compliance Codeunknown
ECCN code3A991.B.1.A
Maximum access time70 ns
Other features100,000 PROGRAM/ERASE CYCLES
startup blockBOTTOM/TOP
command user interfaceYES
Universal Flash InterfaceYES
Data pollingYES
JESD-30 codeR-PDSO-G48
JESD-609 codee3/e6
length18.4 mm
memory density67108864 bit
Memory IC TypeFLASH
memory width16
Number of functions1
Number of departments/size16,126
Number of terminals48
word count4194304 words
character code4000000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize4MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTSSOP
Encapsulate equivalent codeTSSOP48,.8,20
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE, SHRINK PITCH
page size8 words
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)260
power supply3/3.3 V
Programming voltage3 V
Certification statusNot Qualified
ready/busyYES
Maximum seat height1.2 mm
Department size4K,32K
Maximum standby current0.0001 A
Maximum slew rate0.02 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)2.7 V
Nominal supply voltage (Vsup)3 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceMATTE TIN/TIN BISMUTH
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
Maximum time at peak reflow temperature40
switch bitYES
typeNOR TYPE
width12 mm
M29DW641F
64 Mbit (4Mb x16, Multiple Bank, Page, Boot Block)
3V Supply Flash Memory
Features summary
Supply Voltage
– V
CC
= 2.7V to 3.6V for Program, Erase and
Read
– V
PP
/WP=12V for Fast Program (optional)
Asynchronous Page Read mode
– Page Width 8 Words
– Page Access 25, 30ns
– Random Access: 60, 70ns
Programming Time
– 10µs per Word typical
– 4 Words at-a-time Program
Memory blocks
– Quadruple Bank Memory Array:
8Mbit+24Mbit+24Mbit+8Mbit
– Parameter Blocks (at Top and Bottom)
Dual Operations
– While Program or Erase in a group of
banks (from 1 to 3), Read in any of the
other banks
Program/Erase Suspend and Resume modes
– Read from any Block during Program
Suspend
– Read and Program another Block during
Erase Suspend
Unlock Bypass Program command
– Faster Production/Batch Programming
Common Flash Interface
– 64 bit Security Code
100,000 Program/Erase cycles per block
Low power consumption
– Standby and Automatic Standby
Extended Memory Block
– Extra block used as security block or to
store additional information
TSOP48 (N)
12 x 20mm
FBGA
TFBGA48 (ZE)
6 x 8mm
Hardware Block Protection
– V
PP
/WP Pin for fast program and write
protect of the four outermost parameter
blocks
Software Block Protection
– Standard Protection
– Password Protection
Electronic Signature
– Manufacturer Code: 0020h
– Device Code: 227Eh + 2203h + 2200h
ECOPACK
®
packages
December 2005
Rev 1
1/80
www.st.com
1

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